Truth Instruments Co., Ltd.
| Payment Terms | T/T |
| Name | Hysteresis Loop Instrument |
| Uptime | 90% |
| Magnetic Field Uniformity | Better Than ±1%@Φ1 Mm |
| EFEM | Optional |
| Sample Size | Compatible With 12-inch And Below, Supports Fragment Testing |
| Magnetic Field Resolution | PID Closed-loop Feedback Regulation, 0.01 MT |
| Testing Functions | Non-destructive Hysteresis Loop Measurement Of Magnetic Stacks/devices, Automatic Extraction Of Hysteresis Loop Information (free Layer And Pinned Layer Hc, Hex, M (Kerr Angle Value)), And Rapid Mapping Of Wafer Magnetic Characteristic Distribution |
| Testing Efficiency | 12 WPH@±1.3 T /9 Sites Measurement/200 Mm Wafer |
| Sample Repeatability | Better Than 10 μm |
| Brand Name | Truth Instruments |
| Model Number | Wafer-MOKE |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Name | Hysteresis Loop Instrument |
| Uptime | 90% | Magnetic Field Uniformity | Better Than ±1%@Φ1 Mm |
| EFEM | Optional | Sample Size | Compatible With 12-inch And Below, Supports Fragment Testing |
| Magnetic Field Resolution | PID Closed-loop Feedback Regulation, 0.01 MT | Testing Functions | Non-destructive Hysteresis Loop Measurement Of Magnetic Stacks/devices, Automatic Extraction Of Hysteresis Loop Information (free Layer And Pinned Layer Hc, Hex, M (Kerr Angle Value)), And Rapid Mapping Of Wafer Magnetic Characteristic Distribution |
| Testing Efficiency | 12 WPH@±1.3 T /9 Sites Measurement/200 Mm Wafer | Sample Repeatability | Better Than 10 μm |
| Brand Name | Truth Instruments | Model Number | Wafer-MOKE |
| Place of Origin | CHINA | ||
| High Light | Wafer Level Hysteresis Loop Instrument ，Non Destructive Wafer Measurement System ，Non Destructive Hysteresis Loop Instrument | ||
Using polar/longitudinal magneto-optical Kerr effects (MOKE), this instrument rapidly and globally detects the magnetism of wafer films. Non-contact measurement avoids wafer damage and is suitable for post-patterning sample testing in spin chip production. It provides a vertical magnetic field of up to 2.5 T and an in-plane magnetic field of up to 1.4 T, with strong magnetic fields inducing free and reference layer flipping in vertically anisotropic magnetic access random memory (MRAM) film stacks. Ultra-high Kerr detection sensitivity allows single-time characterization of subtle magnetic changes in different film layers. Combining laserpoint-by-point probing with scanning imaging enables rapid creation of global wafer magnetic characteristic maps, aiding process optimization and yield control.
| Equipment Performance Indicator | Description |
|---|---|
| Sample Size | Compatible with 12-inch and below, supports fragment testing |
| Magnetic Field | Vertical ±2.4 T; In-plane ±1.3 T |
| Magnetic Field Resolution | PID closed-loop feedback regulation, 0.01 mT |
| Magnetic Field Uniformity | Better than ±1%@Φ1 mm |
| Kerr Angle Resolution | 0.3 mdeg (RMS) |
| Testing Efficiency | 12 WPH@±1.3 T /9 sites measurement/200 mm wafer |
| Sample Repeatability | Better than 10 μm |
| Uptime | 90% |
| EFEM | Optional |
| Testing Functions | Non-destructive hysteresis loop measurement of magnetic film stacks/devices, automatic extraction of hysteresis loop information (free layer and pinned layer Hc, Hex, M (Kerr angle value)), and rapid mapping of wafer magnetic characteristic distribution |
Hysteresis Loop Measurement Results of Vertical MRAM Film Stacks
Hysteresis Loop Measurement Results of In-Plane Anisotropic MTJ Film Stacks
Different Scanning Modes
Magnetic Field Characteristic Distribution Map of 12-inch Vertically Anisotropic Wafer
Company Details
Business Type:
Manufacturer
Year Established:
2019
Total Annual:
15.000.000-20.000.000
Employee Number:
100~200
Ecer Certification：
Verified Supplier
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