GaN 50W 100W Anti Drone RF Amplifier Module Multi Band Solid State 10MHz-6GHz

Solid-state RF power amplifier modules employing LDMOS and GaN devices in Class A and Class A/B topologies. Engineered for narrowband and broadband operation across AM, FM, VHF, and UHF bands, delivering output power from 0 dBm to over 50 dBm. Custom modules available upon request. We offers RF Power Amplifier Modules built on robust GaN technology with advanced multi-die integration and compact form factors having 50 Ohms input and output interface. Engineered for wideband, DPD-friendly operation, they deliver high gain and efficiency with robust thermal performance.

• Broad Frequency Capability: 100 MHz – 7.2 GHz coverage ensures comprehensive drone signal jamming
• Custom Frequency Options: Working frequency (e.g. 5725–5850 MHz) fully customizable to customer specifications
• Optimized Adjustability: Bandwidth and GaN operating voltage can be fine-tuned for maximum efficiency
• Complete ODM & OEM Solutions: From concept design and prototyping to production adjustments
• Rapid Delivery Cycle: Standard shipment in 3–10 working days after deposit receipt
• Convenient Payment Options: T/T, Western Union, PayPal, and Credit Card supported
• Reliable Global Shipping: DHL, UPS, TNT, FedEx express or economical sea freight available worldwide

Why GaN Transistors?

• The key characteristics that makes Gallium Nitride an enabling technology is its significantly higher power density and greater reliability. GaN's increased power density (W/mm) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With the increased efficiencies that GaN provides, Empower RF delivers more reliable, smaller and lighter broadband power amplifiers.
• GaN -more specifically GaN on SiC -provides higher output power, longer pulse widths, and larger duty cycles and significantly higher MTTF than GaN on Si, GaAS HEMT, LDMOS, and MOSFET high power transistors.
• Higher Breakdown voltages 60 to 80 VBRDSS (100-150 Volts)
• Higher Power Density
• Superior Thermal Conductivity
• Example: LDMOS - 12W/sq. mm dissipation vs. GaN - 70W/sq. mm dissipation
• Higher Junction Temperatures > 200°C (+225°C to 250°C)
• Higher Saturated Electron Drift Velocity (higher current delivering capability)
• Lower Intrinsic Capacitance which provides higher input/output device impedances allowing broadband matching
• GaN provides High Gain and Efficiencies (Narrow band 50% to 60%)
• Superior Noise & Linear Power Added Efficiency (PAE)

GaN -more specifically GaN on SiC -provides higher output power, longer pulse widths, and larger duty cycles and significantly higher MTTF than GaN on Si, GaAS HEMT, LDMOS, and MOSFET high power transistors.