| Packaging Details | PE bag+ carton |
| Delivery Time | 5-10 days |
| Payment Terms | T/T,L/C,Paypal |
| Supply Ability | 1000sets/day |
| Drain-Source Voltage | 40 V |
| Gate-Source Voltage | ±20V |
| Maximum Power Dissipation | 2W |
| Pulsed Drain Current | 30A |
| Fast Switching Speed | Yes |
| Shape | Square |
| Brand Name | JUYI |
| Model Number | JY13M |
| Place of Origin | China |
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Product Specification
| Packaging Details | PE bag+ carton | Delivery Time | 5-10 days |
| Payment Terms | T/T,L/C,Paypal | Supply Ability | 1000sets/day |
| Drain-Source Voltage | 40 V | Gate-Source Voltage | ±20V |
| Maximum Power Dissipation | 2W | Pulsed Drain Current | 30A |
| Fast Switching Speed | Yes | Shape | Square |
| Brand Name | JUYI | Model Number | JY13M |
| Place of Origin | China | ||
| High Light | p channel mosfet driver ic ,ic driver mosfet ,mosfet driver chip | ||
JY13M N and P Channel 40V MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY13M is the N and P Channel logic enhancement mode power field transistors
Which can provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs may be used in H-bridge, Inverters and other applications.
FEATURES
| Device | VBR(DSS) | RDS(ON) MAX TJ=25ºC | Package |
| N-Channel | 40V | <30mΩ@VGS=10V,ID=12A | TO252-4L |
| <40mΩ@VGS=4.5V,ID=8A | |||
| P-Channel | -40V | <45mΩ@VGS=-10V,ID=-12A | |
| <66mΩ@VGS=-4.5V,ID=-8A |
● Low Input Capacitance
● Fast Switching Speed
Absolute Maximum Ratings(Ta=25ºC Unless Otherwise Noted)
| Parameter | Symbol | N Channel | P Channel | Unit | |
| Drain Source Voltage | VDSS | 40 | -40 | V | |
| Gate Source Voltage | VDSS | ±20 | ±20 | ||
| Continuous Drain Current | Ta=25ºC | ID | 12 | -12 | A |
| Ta=100ºC | 12 | -12 | |||
| Pulsed Drain Current | IDM | 30 | -30 | ||
| Maximum Power Dissipation | Ta=25ºC | PD | 2 | W | |
| Ta=70ºC | 1.3 | ||||
| Junction and Storage Temperature Range | TJ TSTG | -55 to 150 | ºC | ||
| Thermal Resistance Junction to Ambient | RθJA | 10s | 25 | ºC/W | |
| Steady | 60 | ||||
| Thermal Resistance Junction to Case | RθJC | 5.5 | 5 | ºC/W |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
| Static | |||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250uA | N-Ch | 1.7 | 2.5 | 3.0 | V |
| VDS=VGS,ID=-250uA | P-Ch | -1.7 | -2 | -3.0 | |||
| IGSS | Gate Leakage Current | VDS=0V, VGS=±20V | N-Ch | ±100 | nA | ||
| P-Ch | ±100 | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V | N-Ch | 1 | uA | ||
| VDS=-40V, VGS=0V | P-Ch | -1 | |||||
| ID(ON) | On-State Drain Current | VDS=5V, VGS=10V | N-Ch | 30 | A | ||
| VDS=-5V, VGS=-10V | P-Ch | -30 | |||||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,ID=12A | N-Ch | 24 | 30 | mΩ | |
| VGS=-10V,ID=-12A | P-Ch | 36 | 45 | ||||
| VGS=4.5V,ID=8A | N-Ch | 31 | 40 | ||||
| VGS=-4.5V,ID=-8A | P-Ch | 51 | 66 | ||||
| VSD | Diode Forward Voltage | IS=1.0A,VGS=0V | N-Ch | 0.76 | 1.0 | V | |
| IS=-1.0A,VGS=0V | P-Ch | -0.76 | -1.0 |
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DOWNLOAD JY13M USER MANUAL
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
2020
Total Annual:
6000000-8000000
Employee Number:
80~120
Ecer Certification:
Verified Supplier
CHANGZHOU BEXTREME SHELL MOTOR TECHNOLOGY CO.,LTD  ... CHANGZHOU BEXTREME SHELL MOTOR TECHNOLOGY CO.,LTD  ...
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