Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 10Kpcs per year |
Delivery Time | 1-2 working days |
Packaging Details | Plastic Tubes |
Goods Condition | Brand New |
Part Status | Active |
Lead Free / Rohs | Complaint |
Function | MOSFET |
Mounting Type | Through Hole |
Package | TO247 |
Brand Name | IR |
Model Number | IRFPC50PBF |
Certification | CE |
Place of Origin | CN |
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10Kpcs per year |
Delivery Time | 1-2 working days | Packaging Details | Plastic Tubes |
Goods Condition | Brand New | Part Status | Active |
Lead Free / Rohs | Complaint | Function | MOSFET |
Mounting Type | Through Hole | Package | TO247 |
Brand Name | IR | Model Number | IRFPC50PBF |
Certification | CE | Place of Origin | CN |
High Light | high power mosfet transistors ,n channel transistor |
IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications
Manufacturer | Vishay Siliconix | |
---|---|---|
Series | - | |
Packaging ![]() | Tube ![]() | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 180W (Tc) | |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 6A, 10V | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
1995
Ecer Certification:
Site Member
Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc... Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...
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