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China factory - Shenzhen Koben Electronics Co., Ltd.

Shenzhen Koben Electronics Co., Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China 200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through
China 200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through

  1. China 200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through

200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms Western Union, T/T,Paypal
Supply Ability Consultation
Delivery Time 2-3 working days
Packaging Details 50PCS/Standard Package
FET Type N-Channel
Drain to Source Voltage (Vdss) 200V
Drive Voltage 10V
Operating Temperature -55°C ~ 175°C
Brand Name IOR
Model Number IRFB5620PBF
Certification ROHS
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms Western Union, T/T,Paypal Supply Ability Consultation
Delivery Time 2-3 working days Packaging Details 50PCS/Standard Package
FET Type N-Channel Drain to Source Voltage (Vdss) 200V
Drive Voltage 10V Operating Temperature -55°C ~ 175°C
Brand Name IOR Model Number IRFB5620PBF
Certification ROHS Place of Origin CHINA
High Light resolver to digital converter icintegrated circuit chip

IRFB5620PBF N-Channel MOSFET 200V 25A 144W Through Hole TO-220AB

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
FET Feature -
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C

 

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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    1995

  • Ecer Certification:

    Site Member

  Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...   Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...

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  • Reach Us
  • Shenzhen Koben Electronics Co., Ltd.
  • C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
  • https://www.bomsourcing.com/

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