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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
China New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

  1. China New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
  2. China New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

  1. MOQ: 100pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 8000
Delivery Time 1 day
Packaging Details Please contact me for details.
Collector Current 0.5 mA
Collector-Base Voltage 120
Fast Switching 30 nS
Meets MIL-S-19500/182
Brand Name Anterwell
Model Number 2N1893
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 8000
Delivery Time 1 day Packaging Details Please contact me for details.
Collector Current 0.5 mA Collector-Base Voltage 120
Fast Switching 30 nS Meets MIL-S-19500/182
Brand Name Anterwell Model Number 2N1893
Certification new & original Place of Origin original factory
High Light electronic pressure sensorshall effect sensor ic

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 
Maximum Ratings

RATING SYMBOL MAX.

UNIT
 

Collector-Emitter VoltageVCEO80Vdc
Collector-Emitter VoltageVCER100Vdc
Collector-Base VoltageVCBO120Vdc
Emitter-Base VoltageVEBO7.0Vdc
Collector Current - ContinuousIC0.5Adc
Total Device Dissipation @ T A = 25oC Derate above 25oCPD

0.8
4.57

Watt mW/oC
Total Device Dissipation @ T C = 25oC Derate above 25oCPD

3.0
17.2

Watt mW/oC
Operating Temperature RangeTJ-55 to +200oC
Storage Temperature RangeTS-55 to +200oC
Thermal Resistance, Junction to AmbientRqJA219oC/W
Thermal Resistance, Junction to CaseRqJA58oC/W

 
Mechanical Outline

 

Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICSSYMBOLMIN.TYP.MAX.UNIT
Off Characteristics     
Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)BVCER100 --
Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)BVCEO 80 --
Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0)BV(BR)CBO120 --Vdc
Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0)BV(BR)CBO7.0 --
Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C)ICBO 

--
--

 

0.01
15

mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)IEBO

--

 0.01mAdc
On Characteristics      
D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc)                                                        (I C = 10mAdc, VCE = 10 Vdc)(1)                                                    (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1)                                (I C = 150mAdc, VCE = 10 Vdc)(1)hFE

20
35
20
40

 

--
--
--
120

--
Collector-Emitter Saturation Voltage(1)                                                         (IC = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 0.5Vdc
Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 1.3Vdc
Magnitude of small signal short-circuit forward current ratio           (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)/hfe/3 10 
Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)COBO5 15pF
Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)hib4.0 8.0Ohms
Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hrb-- 1.5X 10-4
Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hfe

35
45

 

100
--

--
Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hob

--
--

 0.5mmho
Pulse response (Vcc = 20Vdc, Ic = 500mAdc)ton + tof-- 30ns

 
(1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.



















Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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Get in touch with us

  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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