| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 6900pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Drain-source voltage | 500 V |
| Gate-source voltage | ± 30 V |
| Drain current (continuous) at TC = 25 °C | 11 A |
| Drain current (pulsed) | 44 A |
| Peak diode recovery voltage slope | 4.5 V/ns |
| Operating junction temperature | -55 to 150 °C |
| Brand Name | Anterwell |
| Model Number | STF13NK50Z |
| Certification | new & original |
| Place of Origin | original factory |
View Detail Information
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 6900pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Drain-source voltage | 500 V | Gate-source voltage | ± 30 V |
| Drain current (continuous) at TC = 25 °C | 11 A | Drain current (pulsed) | 44 A |
| Peak diode recovery voltage slope | 4.5 V/ns | Operating junction temperature | -55 to 150 °C |
| Brand Name | Anterwell | Model Number | STF13NK50Z |
| Certification | new & original | Place of Origin | original factory |
| High Light | npn smd transistor ,multi emitter transistor | ||
STF13NK50Z, STP13NK50Z, STW13NK50Z
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
Features
| Type | VDSS | RDS(on) max | ID | Pw |
| STF13NK50Z | 500 V | <0.48 Ω | 11 A | 30 W |
| STP13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
| STW13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| TO-220, TO-247 | TO-220FP | |||
| VDS | Drain-source voltage (VGS = 0) | 500 | V | |
| VGS | Gate-source voltage | ± 30 | V | |
| ID | Drain current (continuous) at TC = 25 °C | 11 | 11(1) | A |
| ID | Drain current (continuous) at TC=100 °C | 6.93 | 6.93(1) | A |
| IDM(2) | Drain current (pulsed) | 44 | 44(1) | A |
| PTOT | Total dissipation at TC = 25 °C | 140 | 30 | W |
| Derating factor | 1.12 | 0.24 | W/°C | |
| dv/dt(3) | Peak diode recovery voltage slope | 4.5 | V/ns | |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 °C) | 2500 | V | |
TJ Tstg | Operating junction temperature Storage temperature | -55 to 150 | °C | |
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS
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Internal schematic diagram![]()
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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