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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z
China N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z

  1. China N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z

N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 6900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-source voltage 500 V
Gate-source voltage ± 30 V
Drain current (continuous) at TC = 25 °C 11 A
Drain current (pulsed) 44 A
Peak diode recovery voltage slope 4.5 V/ns
Operating junction temperature -55 to 150 °C
Brand Name Anterwell
Model Number STF13NK50Z
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 6900pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-source voltage 500 V Gate-source voltage ± 30 V
Drain current (continuous) at TC = 25 °C 11 A Drain current (pulsed) 44 A
Peak diode recovery voltage slope 4.5 V/ns Operating junction temperature -55 to 150 °C
Brand Name Anterwell Model Number STF13NK50Z
Certification new & original Place of Origin original factory
High Light npn smd transistormulti emitter transistor

 
STF13NK50Z, STP13NK50Z, STW13NK50Z
 
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
 
Features

TypeVDSSRDS(on) maxIDPw
STF13NK50Z500 V<0.48 Ω11 A30 W
STP13NK50Z500 V<0.48 Ω11 A140 W
STW13NK50Z500 V<0.48 Ω11 A140 W

 
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
 
Applications
■ Switching application
 
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
 
Absolute maximum ratings

SymbolParameterValueUnit
TO-220, TO-247TO-220FP
VDSDrain-source voltage (VGS = 0)500V
VGSGate-source voltage± 30V
IDDrain current (continuous) at TC = 25 °C1111(1)A
IDDrain current (continuous) at TC=100 °C6.936.93(1)A
IDM(2)Drain current (pulsed)4444(1)A
PTOTTotal dissipation at TC = 25 °C14030W
 Derating factor1.120.24W/°C
dv/dt(3)Peak diode recovery voltage slope4.5V/ns
VISOInsulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 °C) 2500V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150°C

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS
 

 
Internal schematic diagram

 
 
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Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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Get in touch with us

  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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