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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET
China FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

  1. China FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 6900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-Source Voltage 60 V
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy 280 mJ
Avalanche Current 30 A
Repetitive Avalanche Energy 7.9 mJ
Operating and Storage Temperature -55 to +175 °C
Brand Name Anterwell
Model Number FQP30N06
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 6900pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-Source Voltage 60 V Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy 280 mJ Avalanche Current 30 A
Repetitive Avalanche Energy 7.9 mJ Operating and Storage Temperature -55 to +175 °C
Brand Name Anterwell Model Number FQP30N06
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

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FQP30N06

60V N-Channel MOSFET

 

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

 

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

 

Features

• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 40 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

 

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP30N06 Units
VDSS Drain-Source Voltage 60 V
ID

Drain Current - Continuous (TC = 25°C)

                    - Continuous (TC = 100°C)

30 A
21.3 A
IDM Drain Current - Pulsed (Note 1) 120 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) 30 A
EAR Repetitive Avalanche Energy (Note 1) 7.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD

Power Dissipation (TC = 25°C)

                       - Derate above 25°C

79 W
0.53 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C

 

 

 

 

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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