Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8600pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Drain-Source Voltage | –30 V |
Gate-Source Voltage | ±20 V |
Drain Current – Continuous | –8.8 A |
Power Dissipation for Single Operation | 2.5 W |
Operating and Storage Junction Temperature Range | –55 to +175 °C |
Thermal Resistance, Junction-to-Case | 25 °C/W |
Brand Name | Anterwell |
Model Number | SI4435DY |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8600pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Drain-Source Voltage | –30 V | Gate-Source Voltage | ±20 V |
Drain Current – Continuous | –8.8 A | Power Dissipation for Single Operation | 2.5 W |
Operating and Storage Junction Temperature Range | –55 to +175 °C | Thermal Resistance, Junction-to-Case | 25 °C/W |
Brand Name | Anterwell | Model Number | SI4435DY |
Certification | new & original | Place of Origin | original factory |
High Light | power mosfet ic ,silicon power transistors |
SI4435DY
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Applications
· Power management
· Load switch
· Battery protection
Features
· –8.8 A, –30 V RDS(ON) = 20 mW @ VGS = –10 V
RDS(ON) = 35 mW @ VGS = –4.5 V
· Low gate charge (17nC typical)
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Absolute Maximum Ratings TA=25℃ unless otherwise noted
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | -30 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID | Drain Current – Continuous (Note 1a) – Pulsed | –8.8 | A |
–50 | |||
PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) | 2.5 | W |
1.2 | |||
1 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +175 | °C |
Thermal Characteristics
RθJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | °C/W |
RθJA | Thermal Resistance, Junction-to-Ambient (Note 1c) | 125 | °C/W |
RθJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 | °C/W |
Package Marking and Ordering Information
Device Marking | Device | Reel Size | Tape width | Quantity |
SI4435DY | SI4435DY | 13’’ | 12mm | 2500 units |
Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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