Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 7800pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Drain-Source Voltage | 200 V |
Gate-Source Voltage | ± 30 V |
Single Pulsed Avalanche Energy | 210 mJ |
Avalanche Current | 9.5 A |
Repetitive Avalanche Energy | 7.2 mJ |
Operating and Storage Temperature Range | -55 to +150 °C |
Brand Name | Anterwell |
Model Number | FQPF10N20C |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 7800pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Drain-Source Voltage | 200 V | Gate-Source Voltage | ± 30 V |
Single Pulsed Avalanche Energy | 210 mJ | Avalanche Current | 9.5 A |
Repetitive Avalanche Energy | 7.2 mJ | Operating and Storage Temperature Range | -55 to +150 °C |
Brand Name | Anterwell | Model Number | FQPF10N20C |
Certification | new & original | Place of Origin | original factory |
High Light | multi emitter transistor ,silicon power transistors |
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol | Parameter | FQP10N20C | FQPF10N20C | Units |
VDSS | Drain-Source Voltage | 200 | V | |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) | 9.5 | 9.5 * | A |
6.0 | 6.0 * | A | ||
IDM | Drain Current - Pulsed (Note 1) | 38 | 38 * | A |
VGSS | Gate-Source Voltage | ± 30 | V | |
EAS | Single Pulsed Avalanche Energy (Note 2) | 210 | mJ | |
IAR | Avalanche Current (Note 1) | 9.5 | A | |
EAR | Repetitive Avalanche Energy (Note 1) | 7.2 | mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C | 72 | 38 | W |
0.57 | 0.3 | W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 | °C |
* Drain current limited by maximum junction temperature.
Package Dimensions
TO-220
TO-220F
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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