Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 9000pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Drain-Source Voltage | - 200 V |
| Gate-Source Voltage | ± 20 V |
| Pulsed Drain Current | - 48 A |
| Linear Derating Factor | 1.2 W/°C |
| Single Pulse Avalanche Energy | 790 mJ |
| Maximum Power Dissipation | 150 W |
| Brand Name | Anterwell |
| Model Number | IRFP9240PBF |
| Certification | new & original |
| Place of Origin | original factory |
View Detail Information
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 9000pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Drain-Source Voltage | - 200 V | Gate-Source Voltage | ± 20 V |
| Pulsed Drain Current | - 48 A | Linear Derating Factor | 1.2 W/°C |
| Single Pulse Avalanche Energy | 790 mJ | Maximum Power Dissipation | 150 W |
| Brand Name | Anterwell | Model Number | IRFP9240PBF |
| Certification | new & original | Place of Origin | original factory |
| High Light | multi emitter transistor ，silicon power transistors | ||
IRFP9240, SiHFP9240
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
PRODUCT SUMMARY
| VDS (V) | - 200 V | |
| RDS(on) (Max.) (Ω) | VGS = - 10 V | 0.50 |
| Qg (Max.) (nC) | 44 | |
| Qgs (nC) | 7.1 | |
| Qgd (nC) | 27 | |
| Configuration | Single | |
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - 200 | V | ||
| Gate-Source Voltage | VGS | ± 20 | V | ||
| Continuous Drain Current | VGS at - 10 V | TC = 25 °C | ID | - 12 | A |
| TC = 100 °C | - 7.5 | ||||
| Pulsed Drain Current a | IDM | -48 | A | ||
| Linear Derating Factor | 1.2 | W/°C | |||
| Single Pulse Avalanche Energy b | EAS | 790 | mJ | ||
| Repetitive Avalanche Current a | IAR | - 12 | A | ||
| Repetitive Avalanche Energy a | EAR | 15 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 150 | W | |
| Peak Diode Recovery dV/dt c | dV/dt | - 5.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | °C | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300 d | °C | ||
| Mounting Torque | 6-32 or M3 screw | 10 | lbf·in | ||
| 1.1 | N·m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, RG = 25 Ω, IAS = - 12 A (see fig. 12).
c. ISD ≤ - 12 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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