Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 8800pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| VCC active current (TTL Inputs) | 60 mA |
| VCC standby current (TTL Inputs) | 2 mA |
| VCC standby current (CMOS Inputs) | 500 µA |
| Input leakage current | 10 µA |
| Output leakage current | 10 µA |
| Storage temperature | -65°C to +150°C |
| Brand Name | Anterwell |
| Model Number | X28HC256P-15 |
| Certification | new & original |
| Place of Origin | original factory |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8800pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| VCC active current (TTL Inputs) | 60 mA | VCC standby current (TTL Inputs) | 2 mA |
| VCC standby current (CMOS Inputs) | 500 µA | Input leakage current | 10 µA |
| Output leakage current | 10 µA | Storage temperature | -65°C to +150°C |
| Brand Name | Anterwell | Model Number | X28HC256P-15 |
| Certification | new & original | Place of Origin | original factory |
| High Light | electronics ic chip ，integrated circuit ic | ||
X28HC256
256K, 32K x 8 Bit
5 Volt, Byte Alterable EEPROM
FEATURES
• Access time: 70ns
• Simple byte and page write
—Single 5V supply
—No external high voltages or VPP control circuits
—Self-timed
—No erase before write
—No complex programming algorithms
—No overerase problem
• Low power CMOS
—Active: 60mA
—Standby: 500µA
• Software data protection
—Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
—Endurance: 1,000,000 cycles
—Data retention: 100 years
• Early end of write detection
—DATA polling
—Toggle bit polling
DESCRIPTION
The X28HC256 is a second generation high performance CMOS 32K x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard Software Data Protection feature for protecting against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum 1,000,000 write cycles per byte and an inherent data retention of 100 years.
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Temperature under bias
X28HC256 ....................................... -10°C to +85°C
X28HC256I, X28HC256M .............. -65°C to +135°C
Storage temperature ......................... -65°C to +150°C
Voltage on any pin with
respect to VSS ........................................ -1V to +7V
D.C. output current .............................................10mA
Lead temperature (soldering, 10 seconds)........ 300°C
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device (at these or any other conditions above those indicated in the operational sections of this specification) is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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