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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
China TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

  1. China TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-source voltage 600 V
Gate-source voltage ±30 V
Drain current (DC) 9.7 A
Drain current (pulsed) 38.8 A
Power dissipation 80 W
Single-pulse avalanche energy 121 mJ
Brand Name Anterwell
Model Number TK10P60W
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 10000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-source voltage 600 V Gate-source voltage ±30 V
Drain current (DC) 9.7 A Drain current (pulsed) 38.8 A
Power dissipation 80 W Single-pulse avalanche energy 121 mJ
Brand Name Anterwell Model Number TK10P60W
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

MOSFETs Silicon N-Channel MOS (DTMOS)

TK10P60W

 

Applications

• Switching Voltage Regulators

 

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)

     by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

 

Packaging and Internal Circuit

 

Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 600 V
Gate-source voltage VGSS ±30 V
Drain current (DC)  (Note 1) ID 9.7 A
Drain current (pulsed)  (Note 1) IDP 38.8 A
Power dissipation  (Tc = 25℃) PD 80 W
Single-pulse avalanche energy  (Note 2) EAS 121 mJ
Avalanche current IAR 2.5 A
Reverse drain current (DC)  (Note 1) IDR 9.7 A
Reverse drain current (pulsed)  (Note 1) IDRP 38.8 A
Channel temperature Tch 150
Storage temperature Tstg -55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note

1: Ensure that the channel temperature does not exceed 150℃. Note

2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A

 

 

 

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
SKCH28/06 389 15+ MODULE
SKD30/12A1 635 14+ MODULE
SKD62/16 638 13+ MODULE
SKDH116/16-L100 287 16+ MODULE
SKDH116/16-L75 383 13+ MODULE
SKHI22AH4R 317 13+ MODULE
SKIIP13NAB065V1 458 14+ MODULE
SKIIP22NAB12T18 278 16+ MODULE
SKIIP23NAB126V1 290 14+ MODULE
SKIIP24NAB063T12 293 13+ MODULE
SKIIP25AC125V10 302 16+ MODULE
SKIIP32NAB12T1 608 14+ MODULE
SKIIP39ANB16V1 227 13+ MODULE
SKIIP82AC12IT1 251 16+ MODULE
SKIIP82AHB15T1 260 16+ MODULE
SKIIP83AC128IST1 224 14+ MODULE
SKKD100/16 503 16+ MODULE
SKKD162/16 434 13+ MODULE
SKKD46/12 659 16+ MODULE
SKKE81/12E 515 14+ MODULE
SKKH106/16E 200 16+ MODULE
SKKH57/16E 719 16+ MODULE
SKKT162/16E 425 16+ MODULE
SKKT162/18E 392 16+ MODULE
SKKT210/12E 326 16+ MODULE
SKKT250/14E 329 16+ MODULE
SKKT330/16E 296 16+ MODULE
SKKT430/16E 254 15+ MODULE
SKKT500/18E 236 16+ MODULE
SKKT57/14E 590 16+ MODULE

 

 

 

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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Get in touch with us

  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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