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{"title":"2N7002LT1G ONSEMI Mosfet Transistors N-CH 60V 0.115A 3 Pin SOT-23 T\/R","imgUrl":"https:\/\/img.chinax.com\/nimg\/3c\/69\/edf3bd8dc8bac4d650de698c07c4-200x200-1\/2n7002lt1g_onsemi_mosfet_transistors_n_ch_60v_0_115a_3_pin_sot_23_t_2fr.jpg","attrs":{"Brand Name":"ONSEMI","Model Number":"2N7002LT1G","Place of Origin":"China","Minimum Order Quantity":"package qty"}}
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{"title":"BAT54S Nexperia Rectifier Schottky Diode 30V 0.2A 5ns 3 Pin SOT-23 T\/R","imgUrl":"https:\/\/img.chinax.com\/nimg\/95\/7c\/d34bc38d7a990214488e4646c2a6-200x200-1\/bat54s_nexperia_rectifier_schottky_diode_30v_0_2a_5ns_3_pin_sot_23_t_2fr.jpg","attrs":{"Brand Name":"Nexperia","Model Number":"BAT54S","Place of Origin":"China","Minimum Order Quantity":"package qty"}}
{"title":"MMBT3904LT1G ONSEMI Trans GP BJT NPN 40V 0.2A 300mW 3 Pin SOT-23 T\/R","imgUrl":"https:\/\/img.chinax.com\/nimg\/3c\/fc\/dfa542e95660ee68252329a33b9d-200x200-1\/mmbt3904lt1g_onsemi_trans_gp_bjt_npn_40v_0_2a_300mw_3_pin_sot_23_t_2fr.jpg","attrs":{"Brand Name":"ONSEMI","Model Number":"MMBT3904LT1G","Place of Origin":"CHINA","Minimum Order Quantity":"package qty"}}
{"title":"ES0603V014CT AEM ESD Suppressor Diode CeraDiode Bi-Dir 14V 30Vc 2-Pin Case 0603","imgUrl":"https:\/\/img.chinax.com\/nimg\/ef\/3b\/bf2f5990163d9822dbf0a301866a-200x200-1\/es0603v014ct_aem_esd_suppressor_diode_ceradiode_bi_dir_14v_30vc_2_pin_case_0603_t_2fr.jpg","attrs":{"Brand Name":"AEM","Model Number":"ES0603V014CT","Place of Origin":"CHINA","Minimum Order Quantity":"package qty"}}
BSS138LT1G ONsemi Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R
The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low Voltage Applications
• Miniature SOT-23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Application:
• DC-DC converters
• Power management in portable and battery-powered products such as computers
• Printers
• PCMCIA cards
• Cellular and cordless telephones.
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.21.00.95
Automotive
No
PPAP
No
Product Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
50
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.2
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
0.5
Maximum Drain Source Resistance (MOhm)
3500@5V
Typical Input Capacitance @ Vds (pF)
40@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
3.5
Minimum Gate Threshold Voltage (V)
0.85
Typical Output Capacitance (pF)
12
Maximum Power Dissipation (mW)
225
Typical Turn-Off Delay Time (ns)
20(Max)
Typical Turn-On Delay Time (ns)
20(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Maximum Positive Gate Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.8
Typical Gate Plateau Voltage (V)
1.9
Pin Count
3
Standard Package Name
SOT
Supplier Package
SOT-23
Mounting
Surface Mount
Package Height
0.94
Package Length
2.9
Package Width
1.3
PCB changed
3
Lead Shape
Gull-wing
Amplify electronic signals and switch between them with the help of ON Semiconductor's BSS138LT1G power MOSFET. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Business Type:
Manufacturer,Distributor/Wholesaler
Year Established:
2001
Total Annual:
50 Million-55 Million
Employee Number:
>48
Ecer Certification：
Active Member
Sunbeam Electronics (Hong Kong) Limited set up on 2001 start capital HKD 3 Millions, our team total have 48 persons and including 15 professional electronics sourcing engineer and 20 professional marketing specialist.
Sunbeam Electronics' main product line are TI,ADI,NXP,Micron,Microchip,Maxim,... Sunbeam Electronics (Hong Kong) Limited set up on 2001 start capital HKD 3 Millions, our team total have 48 persons and including 15 professional electronics sourcing engineer and 20 professional marketing specialist.
Sunbeam Electronics' main product line are TI,ADI,NXP,Micron,Microchip,Maxim,...
