MPN | IRLML6401TRPBF |
MFR | Infineon |
Category | Mosfet |
Size | 1.02*3.04*1.4mm |
Packaging Details | tape and reel |
Delivery Time | 2 weeks |
Payment Terms | T/T |
Supply Ability | 1000+ |
Brand Name | Infineon |
Model Number | IRLML6401TRPBF |
Place of Origin | CHINA |
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Product Specification
MPN | IRLML6401TRPBF | MFR | Infineon |
Category | Mosfet | Size | 1.02*3.04*1.4mm |
Packaging Details | tape and reel | Delivery Time | 2 weeks |
Payment Terms | T/T | Supply Ability | 1000+ |
Brand Name | Infineon | Model Number | IRLML6401TRPBF |
Place of Origin | CHINA | ||
High Light | Mosfet P Ch Si 12V ,Infineon Mosfet P Ch ,IRLML6401TRPBF |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 12 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Gate Threshold Voltage (V) | 0.95 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 4.3 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 50@4.5V |
Typical Gate Charge @ Vgs (nC) | 10@5V |
Typical Gate to Drain Charge (nC) | 2.6 |
Typical Gate to Source Charge (nC) | 1.4 |
Typical Reverse Recovery Charge (nC) | 8 |
Typical Input Capacitance @ Vds (pF) | 830@10V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 125@10V |
Minimum Gate Threshold Voltage (V) | 0.4 |
Typical Output Capacitance (pF) | 180 |
Maximum Power Dissipation (mW) | 1300 |
Typical Fall Time (ns) | 210 |
Typical Rise Time (ns) | 32 |
Typical Turn-Off Delay Time (ns) | 250 |
Typical Turn-On Delay Time (ns) | 11 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Pulsed Drain Current @ TC=25°C (A) | 34 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 100 |
Typical Gate Plateau Voltage (V) | 1.7 |
Typical Reverse Recovery Time (ns) | 22 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Gate Threshold Voltage (V) | 0.55 |
Maximum Positive Gate Source Voltage (V) | 8 |
Pin Count | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Mounting | Surface Mount |
Package Height | 1.02(Max) |
Package Length | 3.04(Max) |
Package Width | 1.4(Max) |
PCB changed | 3 |
Lead Shape | Gull-wing |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler
Year Established:
2001
Total Annual:
50 Million-55 Million
Employee Number:
>48
Ecer Certification:
Active Member
Sunbeam Electronics (Hong Kong) Limited set up on 2001 start capital HKD 3 Millions, our team total have 48 persons and including 15 professional electronics sourcing engineer and 20 professional marketing specialist. Sunbeam Electronics' main product line are TI,ADI,NXP,Micron,Microchip,Maxim,... Sunbeam Electronics (Hong Kong) Limited set up on 2001 start capital HKD 3 Millions, our team total have 48 persons and including 15 professional electronics sourcing engineer and 20 professional marketing specialist. Sunbeam Electronics' main product line are TI,ADI,NXP,Micron,Microchip,Maxim,...
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