BeO ceramic substrate manufacturer high thermal conductivity for RF power

Product Specification

99.5% BeO Beryllia substrate for ceramic PCB

Beryllium oxide (BeO) ceramic materials are in high demand due to their superior performance at high temperatures along with a thermal conductivity second only to diamond among insulating materials. Coraynic is specialized in supply solutions to any component that needs high thermal conductivity in conjunction with electrical resistivity. with our unique combination of materials forming, firing and fabrication technologies, we are rapidly expanding our product portfolio to provide the next generation of beryllia ceramic materials. BeO Ceramic Materials are ideal in thermal management applications when the following design considerations are critical: Ideal materials for heat sinks in electronic circuits, Ideal crucible material for melting and sintering operations providing superior performance at very high temperatures. the device is exposed to high ambient temperatures.

Specification 

The excellent performance characteristics of beryllium oxide (BeO) continue to make it well suited for RF power transistors and other devices that operate at very high power levels. Applications include military and aerospace pulsed power applications, where its inherent advantages remain unchallenged. BeO’s continued importance as an insulating material is a result of its superior thermal conductivity (TC) of about 325 W/mK at room temperature, Its nearest competitor in this respect is aluminum nitride (AlN) at about 185 W/mK, with alumina (Al2O3) at a distant 25. As a result, when thermal management and electrical isolation are key considerations, RF power transistor packages based on BeO are the best choice.

With a low dielectric constant of 6.7 and a low loss index of 0.0012 at 1 MHz, BeO is well suited for use at high frequencies. BeO is very stable in oxygen/moisture-containing environments. Ceramic-to-metal joints and metallization coatings are generally very strong and reliable, which is important in the design of high-reliability military systems.

BeO packaging technology for microwave and power RF applications remains superior at the highest power levels when the greatest amount of heat is dissipated. The stability of BeO ceramic components in reducing and oxidizing environments also makes it the prime candidate for long-life, high-reliability commercial and defense applications. As a thermal management ceramic, BeO outperforms AlN for pulsed-power RF packaging applications.

Coraynic Technology Limited provides Beryllium oxide ceramic products that also provide very low RF loss for RF and microwave microelectronics packaging. We can incorporate flanges of advanced materials to achieve the high power density requirements of RF power transistors. Our high-quality ceramic packages support a wide variety of RF power transistors and MMICS, including transistors fabricated in Si, GaAs, and GaN. All packages are plated with electrolytic nickel and gold to meet the exacting standards of the microelectronics packaging industry.

Our team can assist with selecting an optimal product for your RF and microwave microelectronics packaging. Contact our engineers for the best solution!