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{"title":"H5TQ4G63CFR-RDC Dram Memory Chip 256MX16 CMOS PBGA96 Surface Mount High","imgUrl":"https:\/\/img.chinax.com\/nimg\/bd\/c3\/986d80d57daf34b51315061a6abd-200x200-1\/h5tq4g63cfr_rdc_dram_memory_chip_256mx16_cmos_pbga96_surface_mount_high_efficiency.jpg","attrs":{"Model Number":"H5TQ4G63CFR-RDC","Certification":"ORIGINAL PARTS","Minimum Order Quantity":"1 package","Price":"Negotiation"}}
{"title":"DRAM Memory Chip MT53B384M64D4NK-062 WT A SDRAM Lpddr4 24Gb ( 384M X 64) 1600MHz","imgUrl":"https:\/\/img.chinax.com\/nimg\/a9\/54\/d6ffa560aa85136479ad291b82c4-200x200-1\/dram_memory_chip_mt53b384m64d4nk_062_wt_a_sdram_lpddr4_24gb_28_384m_x_64_29_1600mhz.jpg","attrs":{"Model Number":"MT53B384M64D4NK-062 WT:A","Certification":"ORIGINAL PARTS","Minimum Order Quantity":"1 package","Price":"Negotiation"}}
{"title":"K4G41325FC-HC03 DRAM Memory Chip GDDR5 SGRAM 4G-Bit 128M X 32 1.5V 170-Pin FBGA","imgUrl":"https:\/\/img.chinax.com\/nimg\/22\/4f\/fb0e6d4f6cafcd5a3faf3b46c699-200x200-1\/k4g41325fc_hc03_dram_memory_chip_gddr5_sgram_4g_bit_128m_x_32_1_5v_170_pin_fbga.jpg","attrs":{"Model Number":"K4G41325FC-HC03","Certification":"Original Parts","Minimum Order Quantity":"1 piece","Price":"Negotiation"}}
{"title":"DRAM Memory Chip K4B4G1646E-BYK0 - DDR3L SDRAM 4Gbit 256M X 16 1.5V 96-Pin FBGA","imgUrl":"https:\/\/img.chinax.com\/nimg\/d3\/f0\/1657a3e1090cccce9f5ef433b8fd-200x200-1\/dram_memory_chip_k4b4g1646e_byk0_ddr3l_sdram_4gbit_256m_x_16_1_5v_96_pin_fbga_1600_mbps.jpg","attrs":{"Model Number":"K4B4G1646E-BYK0","Certification":"Original Parts","Minimum Order Quantity":"1 package","Price":"Negotiation"}}
Double data rate architecture for command, address and data Bus; - all control and address except CS_n, CKE latched at both rising and falling edge of the clock - CS_n, CKE latched at rising edge of the clock - two data accesses per clock cycle
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c) - Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c) - Data outputs aligned to the edge of the data strobe (DQS_t, DQS_c) when READ operation - Data inputs aligned to the center of the data strobe (DQS_t, DQS_c) when WRITE operation
DM masks write data at the both rising and falling edge of the data strobe
Programmable RL (Read Latency) and WL (Write Latency)
Programmable burst length: 8
Auto refresh and self refresh supported
All bank auto refresh and per bank auto refresh supported
Auto TCSR (Temperature Compensated Self Refresh)
PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
Beijing Silk Road Enterprise Management Services Co.,LTD was founded in 2000, it is a distributor for the computer CPU, Server CPU, IPC CPU, GPU. CHIPSET and Memory chip of the famous brand in the world. The brand include INTEL, AMD, NVIDIA, ATI, SAMSUNG, MICRON,, SKHYNIX,.etc.
&nbs... Beijing Silk Road Enterprise Management Services Co.,LTD was founded in 2000, it is a distributor for the computer CPU, Server CPU, IPC CPU, GPU. CHIPSET and Memory chip of the famous brand in the world. The brand include INTEL, AMD, NVIDIA, ATI, SAMSUNG, MICRON,, SKHYNIX,.etc.
&nbs...
