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China factory - SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

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China H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage
China H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

  1. China H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

  1. MOQ: 1 package
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, PayPal, Western Union, Escrow and others
Supply Ability 6000pcs per month
Delivery Time 3-5 work days
Packaging Details 10cm X 10cm X 5cm
Item number H9HCNNN4KMMLHR
Package BGA200
Org. X16
Density 4GB
Vol: 1.8V-1.1V-0.6V
Speed L/M
Model Number H9HCNNN4KMMLHR
Certification Original Parts

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, PayPal, Western Union, Escrow and others Supply Ability 6000pcs per month
Delivery Time 3-5 work days Packaging Details 10cm X 10cm X 5cm
Item number H9HCNNN4KMMLHR Package BGA200
Org. X16 Density 4GB
Vol: 1.8V-1.1V-0.6V Speed L/M
Model Number H9HCNNN4KMMLHR Certification Original Parts
High Light dynamic random access memorydram computer chip

DRAM Memory Chip DRAM Memory Chip H9HCNNN4KMMLHR 4Gb LPDDR4 BGA200 Memory Chip Storage

 

 

Features:

 VDD1 = 1.8V (1.7V to 1.95V) · VDD2 and VDDCA = 1.1V (1.06V to 1.17V) · VDDQ = 0.6V (0.57V to 0.65V) · VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI) · Single data rate architecture for command and address;   - all control and address latched at rising edge of the clock · Double data rate architecture for data Bus;   - two data accesses per clock cycle · Differential clock inputs (CK_t, CK_c) · Bi-directional differential data strobe (DQS_t, DQS_c)   - Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c) · DMI pin support for write data masking and DBIdc functionality · Programmable RL (Read Latency) and WL (Write Latency) · Burst length: 16 (default), 32 and On-the-fly   - On the fly mode is enabled by MRS · Auto refresh and self refresh supported · All bank auto refresh and directed per bank auto refresh supported · Auto TCSR (Temperature Compensated Self Refresh) · PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask · Background ZQ Calibration 
Product Specifications
Part No.

 COMPARE

Den.

 

Org.

 

Vol

 

Speed

 

Power

 

PKG

 

Product Status

 

H9HCNNN4KMMLHR 4Gb x16 1.8V-1.1V-0.6V L / M Low Power 200 Mass production
H9HCNNN4KUMLHR 4Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNN8KUMLHR 8Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNBKMMLHR 16Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNBKUMLHR 16Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production
H9HCNNNBPUMLHR 16Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNCPMMLHR 32Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNCPUMLHR 32Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production

 

Speed
Part Number Speed
L 3200Mbps
M 3733Mbps

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company,Seller

  • Year Established:

    2009

  • Total Annual:

    5000000-10000000

  • Employee Number:

    100~120

  • Ecer Certification:

    Verified Supplier

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  • SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
  • ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
  • https://www.cpuprocessorchip.com/

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