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China W9725G6JB25I-ND Flash Memory Chip , IC DRAM 256mb Nand Flash PARALLEL 84WBGA
China W9725G6JB25I-ND Flash Memory Chip , IC DRAM 256mb Nand Flash PARALLEL 84WBGA

  1. China W9725G6JB25I-ND Flash Memory Chip , IC DRAM 256mb Nand Flash PARALLEL 84WBGA

W9725G6JB25I-ND Flash Memory Chip , IC DRAM 256mb Nand Flash PARALLEL 84WBGA

  1. MOQ: 1 package
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, PayPal, Western Union, Escrow and others
Supply Ability 6000pcs per month
Delivery Time 3-5 work days
Packaging Details 10cm X 10cm X 5cm
Item numbe W9725G6JB25I-ND
Products Category Memory & Flash Memory
Storage Capacity 256Mb (16M x 16)
Frequency 200MHz
VOLT 1.7 V ~ 1.9 V
Technology SDRAM - DDR2
Temp. -40°C ~ 95°C(TC)
Package BGA96
Model Number W9725G6JB25I-ND
Certification Original Parts

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, PayPal, Western Union, Escrow and others Supply Ability 6000pcs per month
Delivery Time 3-5 work days Packaging Details 10cm X 10cm X 5cm
Item numbe W9725G6JB25I-ND Products Category Memory & Flash Memory
Storage Capacity 256Mb (16M x 16) Frequency 200MHz
VOLT 1.7 V ~ 1.9 V Technology SDRAM - DDR2
Temp. -40°C ~ 95°C(TC) Package BGA96
Model Number W9725G6JB25I-ND Certification Original Parts
High Light nand type flash memoryflash memory controller chip

Flash Memory Chip W9725G6JB25I-ND,IC DRAM 256M PARALLEL 84WBGA​

 

 

Basic Features
Type DDR2 SDRAM
Organisation x16
Speed 400 MHz
Voltage 1.8 V
Package WBGA-84

 

Description:

 

The W9725G6JB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words x 4 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W9725G6JB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.

 

The automotive grade parts temperature, if offered, has two simultaneous requirements: ambient temperature (TA) surrounding the device cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K), and the case temperature (TCASE) cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K). JEDEC specifications require the refresh rate to double when TCASE exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TCASE is < 0°C or > +85°C.

 

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CLK rising and NOT CLK falling). All I/Os are synchronized with a single ended DQS or differential DQS- NOT DQS pair in a source synchronous fashion.

 

Features:

  • Power Supply: VDD, VDDQ = 1.8 V ± 0.1V
  • Double Data Rate architecture: two data transfers per clock cycle
  • CAS Latency: 3, 4, 5, 6 and 7
  • Burst Length: 4 and 8
  • Bi-directional, differential data strobes (DQS and NOT DQS ) are transmitted / received with data
  • Edge-aligned with Read data and center-aligned with Write data
  • DLL aligns DQ and DQS transitions with clock
  • Differential clock inputs (CLK and NOT CLK )
  • Data masks (DM) for write data
  • Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
  • Posted NOT CAS programmable additive latency supported to make command and data bus efficiency
  • Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
  • Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
  • Auto-precharge operation for read and write bursts
  • Auto Refresh and Self Refresh modes
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = Read Latency - 1 (WL = RL - 1)
  • Interface: SSTL_18
  • Packaged in WBGA 84 Ball (8X12.5 mm²), using Lead free materials with RoHS compliant

 

 

 

 

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company,Seller

  • Year Established:

    2009

  • Total Annual:

    5000000-10000000

  • Employee Number:

    100~120

  • Ecer Certification:

    Verified Supplier

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  • SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
  • ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
  • https://www.cpuprocessorchip.com/

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