IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA

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Payment Terms	Western Union,T/T
Supply Ability	10000
Delivery Time	5-8DAY
Packaging Details	T/R
Operating Voltage Range	1.14V to 1.26V
Data Rate	2400 MT/s
Packaging Method	Woven tape
Buffering	Unbuffered
Form Factor	DIMM
Data Retention	Retains data as long as power is supplied
Access Time	Typically 5ns to 20ns
Interface	Asynchronous or Synchronous
Rohs	Compliance
Cas Latency	CL17
Universal Packaging	LBGA-64
Installation Method	Surface mount installation
Error Checking	Parity
Organization	32 k x 8
Operating Voltage	1.8V to 5V
Brand Name	ISSI
Model Number	IS43TR16256BL-125KBLI
Certification	ROSH
Place of Origin	TWN

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Product Specification


Payment Terms	Western Union,T/T	Supply Ability	10000
Delivery Time	5-8DAY	Packaging Details	T/R
Operating Voltage Range	1.14V to 1.26V	Data Rate	2400 MT/s
Packaging Method	Woven tape	Buffering	Unbuffered
Form Factor	DIMM	Data Retention	Retains data as long as power is supplied
Access Time	Typically 5ns to 20ns	Interface	Asynchronous or Synchronous
Rohs	Compliance	Cas Latency	CL17
Universal Packaging	LBGA-64	Installation Method	Surface mount installation
Error Checking	Parity	Organization	32 k x 8
Operating Voltage	1.8V to 5V	Brand Name	ISSI
Model Number	IS43TR16256BL-125KBLI	Certification	ROSH
Place of Origin	TWN
High Light	4GB Capacity DRAM Chip ，800MHz Speed DDR3 SDRAM ，BGA-96 Packaging Memory Module

DYNAMIC RANDOM ACCESS MEMORY DRAM IS43TR16256BL-125KBLI 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43/46TR16256B, IS43/46TR16256BL,IS43/46TR85120B, IS43/46TR85120BLIntegrated Silicon Solution, 512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency upto 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval:7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200MHz in DLL off mode
Operating temperature:Commercial (TC = 0°C to +95°C)Industrial (TC = -40°C to +95°C)Automotive, A1 (TC = -40°C to +95°C)Automotive, A2 (TC = -40°C to +105°C)Automotive, A25 (TC = -40°C to +115°C)Automotive, A3 (TC = -40°C to +125°C)1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C

ADDRESS TABLE

Parameter	512Mx8	256Mx16
Row Addressing	A0-A15	A0-A14
Column Addressing	A0-A9	A0-A9
Bank Addressing	BA0-2	BA0-2
Page size	1KB	2KB
Auto Precharge Addressing	A10/AP	A10/AP
BL switch on the fly	A12/BC#	A12/BC#

OPTIONS

Configuration: 512Mx8, 256Mx16
Package:96-ball BGA (9mm x 13mm) for x1678-ball BGA (8mm x 10.5mm) for x8

Company Details

Bronze Gleitlager

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Graphite Plugged Bushings

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Distributor/Wholesaler,Trading Company 
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Year Established:

2022 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Room E, 22nd Floor, Block B, Duhui 100 Building, Huaqiangbei Subdistrict, Futian District, Shenzhen City
https://www.digitalelectronicsic.com/

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