IS43TR16128BL-125KBLI 2GB DYNAMIC RANDOM ACCESS MEMORY BGA-96

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Price： Consult
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Payment Terms	T/T,Western Union
Supply Ability	10000
Delivery Time	5-8DAY
Packaging Details	T/R
Data Width	8-bit
Package Type	SOIC-28
Subcategory	Memory & Data Storage
Capacity	1GB
Memory Type	DDR4 SDRAM
Access Time	10ns
Manufacturer	Example Semiconductor Inc.
Working Voltage	2.7 V to 3.6 V
Speed	DDR4-2400
Application	Cache memory, buffer storage
Installation Method	Surface mount installation
Operating Temperature	0°C to 85°C
Operating Frequency	100MHz
Refresh Count	8K
Interface	SATA III
Brand Name	ISSI
Model Number	IS43TR16128BL-125KBLI
Certification	ROSH
Place of Origin	TWN

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Product Details
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Product Specification


Payment Terms	T/T,Western Union	Supply Ability	10000
Delivery Time	5-8DAY	Packaging Details	T/R
Data Width	8-bit	Package Type	SOIC-28
Subcategory	Memory & Data Storage	Capacity	1GB
Memory Type	DDR4 SDRAM	Access Time	10ns
Manufacturer	Example Semiconductor Inc.	Working Voltage	2.7 V to 3.6 V
Speed	DDR4-2400	Application	Cache memory, buffer storage
Installation Method	Surface mount installation	Operating Temperature	0°C to 85°C
Operating Frequency	100MHz	Refresh Count	8K
Interface	SATA III	Brand Name	ISSI
Model Number	IS43TR16128BL-125KBLI	Certification	ROSH
Place of Origin	TWN
High Light	1.5V DDR3 SDRAM ，8-bit Data Width Memory Chip ，DDR3-1600K Speed Grade Dynamic Random Access Memory

IS43/46TR16128B, IS43/46TR16128BL,IS43/46TR82560B, IS43/46TR82560BL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with systemfrequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) basedon tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential orInterleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval:
- 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
- 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
- Automotive, A1 (TC = -40°C to +95°C)
- Automotive, A2 (TC = -40°C to +105°C)

OPTIONS

Configuration:
- 256Mx8
- 128Mx16
Package:
- 96-ball BGA (9mm x 13mm) for x16
- 78-ball BGA (8mm x 10.5mm) for x8

ADDRESS TABLE

Parameter	256Mx8	128Mx16
Row Addressing	A0-A14	A0-A13
Column Addressing	A0-A9	A0-A9
Bank Addressing	BA0-2	BA0-2
Page size	1KB	2KB
Auto PrechargeAddressing	A10/AP	A10/AP
BL switch on the fly	A12/BC#	A12/BC#

SPEED BIN

Speed Option	15H	125K	107M	093N	Units
JEDEC Speed Grade	DDR3-1333H	DDR3-1600K	DDR3-1866M	DDR3-2133N
CL-nRCD-nRP	9-9-9	11-11-11	13-13-13	14-14-14	tCK
tRCD,tRP(min)	13.5	13.75	13.91	13.09	ns

Company Details

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