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Shenzhen Filetti Technology Co., LTD

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China 3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP
China 3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP

  1. China 3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP
  2. China 3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP
  3. China 3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP

3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP

  1. MOQ: 2
  2. Price: Consult
  3. Get Latest Price
Payment Terms T/T,Western Union
Supply Ability 10000
Delivery Time 5~8day
Packaging Details T/R
Product packaging FBGA-96(8X14)
Packaging method Woven tape
Gross weight of the commodity 0.44(g)
Configuration 32 Meg x 4 x 8 banks
Refresh count 8K
Brand Name ICMAX
Model Number IMD64M16R38AG8GNF
Certification RoHS
Place of Origin CN

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T,Western Union Supply Ability 10000
Delivery Time 5~8day Packaging Details T/R
Product packaging FBGA-96(8X14) Packaging method Woven tape
Gross weight of the commodity 0.44(g) Configuration 32 Meg x 4 x 8 banks
Refresh count 8K Brand Name ICMAX
Model Number IMD64M16R38AG8GNF Certification RoHS
Place of Origin CN
High Light 3.3V 1Gb SLC NAND FlashFBGA-96 NAND Flash Memory8X14 SLC NAND Flash
3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP
1.0 INTRODUCTION
1.1 General Description

Offered in 128Mx8bit, the lMS1G083ZZM1S-WP is a 1G-bit NAND Flash Memory with spare 32Mbi. The device is offered in 3.3v vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64Byte) page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and maintaining of data. The IMS1G083ZZM1S-WP is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

1.2 Features
  • Voltage Supply - Vcc: 3.3V (2.7V~ 3.6V)
  • Organization
    • Memory Cell Array: (128M + 4M) x 8bit
    • Page Size: (2K + 64)Byte
    • Data Register: (2K+ 64)x8bit
    • Block Erase: (128K + 4K)Byte
  • Automatic Program and Erase
    • Page Program: (2K + 64)Byte
  • Page Read Operation
    • Random Read: 25ns (Max.)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection
    • Program/Erase Lockout During Power Transitions
  • Command Driven Operation
  • Unique ID for Copyright Protection
  • Package:
    • IMS1G083ZZM1S-WP: Pb-Free, Halogen-Free
    • Package 48 Pin TSOP1 (12 x 20/0.5 mm pitch)
  • Serial Access: 25ns(Min.)
  • Data Transfer Rate: SDR20Mhz(40Mbps)
  • Fast Write Cycle Time
    • Page Program time: 400us(Typ.)
    • Block Erase Time: 4.5ms(Typ.)
Pin Name Pin Function
Pin Name Function Description
I/O0 ~ I/O7 DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE COMMAND LATCH ENABLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE ADDRESS LATCH ENABLE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high.
CE CHIP ENABLE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation.
RE READ ENABLE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.
WE WRITE ENABLE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
WP WRITE PROTECT The WP pin provides inadvertent program/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low.
R/B READY/BUSY OUTPUT The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
VCC POWER VCC is the power supply for device.
VSS GROUND
N/C NO CONNECTION
Packaging & Shipping

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.

Frequently Asked Questions

How to obtain the price?

We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.

What is your delivery time?

Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.

What are your payment terms?

Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.

What are the shipping options?

Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2022

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Shenzhen Filetti Technology Co., Ltd. was established in 2022. Strategically headquartered in Shenzhen – China’s world-renowned electronics hub ("China Electronics First Street") –  Filetti Technology is a professional distributor of electronic components.      ... Shenzhen Filetti Technology Co., Ltd. was established in 2022. Strategically headquartered in Shenzhen – China’s world-renowned electronics hub ("China Electronics First Street") –  Filetti Technology is a professional distributor of electronic components.      ...

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Get in touch with us

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  • Shenzhen Filetti Technology Co., LTD
  • Room E, 22nd Floor, Block B, Duhui 100 Building, Huaqiangbei Subdistrict, Futian District, Shenzhen City
  • https://www.digitalelectronicsic.com/

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