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CMOS Double Data Rate Synchronous Dynamic Random Access Memory
Product Overview
W9425G6KH-5 4M 4 Banks 16-Bit DDR SDRAM is a CMOS Double Data Rate Synchronous Dynamic Random Access Memory designed for high-performance applications.
Key Features
2.5V ± 0.2V Power Supply for DDR400
Up to 200 MHz Clock Frequency
Double Data Rate architecture: two data transfers per clock cycle
Differential clock inputs (CLK and CLK)
DQS edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8µS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TSOP II 66-pin, using Lead-free materials with RoHS compliance
Part Number Specifications
Part Number
Speed
Self Refresh Current (Max.)
Operating Temperature
W9425G6KH-5
DDR400/CL3
2 mA
0°C ~ 70°C
W9425G6KH-5I
DDR400/CL3
2 mA
-40°C ~ 85°C
Product Images
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.
