| Gate-Emitter Leakage Current : | 100 nA | 
| Product Category : | IGBT Transistors | 
| Mounting Style : | Through Hole | 
| Continuous Collector Current at 25 C : | 41 A | 
| Pd - Power Dissipation : | 160 W | 
| Collector- Emitter Voltage VCEO Max : | 1.2 kV | 
| Package / Case : | TO-247-3 | 
| Maximum Operating Temperature : | + 150 C | 
| Maximum Gate Emitter Voltage : | +/- 20 V | 
| Packaging : | Tube | 
| Configuration : | Single | 
| Collector-Emitter Saturation Voltage : | 2.43 V | 
| Manufacturer : | Infineon Technologies | 
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Product Specification
| Gate-Emitter Leakage Current : | 100 nA | Product Category : | IGBT Transistors | 
| Mounting Style : | Through Hole | Continuous Collector Current at 25 C : | 41 A | 
| Pd - Power Dissipation : | 160 W | Collector- Emitter Voltage VCEO Max : | 1.2 kV | 
| Package / Case : | TO-247-3 | Maximum Operating Temperature : | + 150 C | 
| Maximum Gate Emitter Voltage : | +/- 20 V | Packaging : | Tube | 
| Configuration : | Single | Collector-Emitter Saturation Voltage : | 2.43 V | 
| Manufacturer : | Infineon Technologies | 
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company 
Year Established:
2009 
Employee Number:
600~800 
Ecer Certification:
Verified Supplier 
Beijing Silk Road Enterprise Management Services Co.,LTD We have many good cooperation business relationship at home and abroad, and a good team together, We will continue to make great efforts to achieve a win-win future for our global customers! Our business philosophy is... Beijing Silk Road Enterprise Management Services Co.,LTD We have many good cooperation business relationship at home and abroad, and a good team together, We will continue to make great efforts to achieve a win-win future for our global customers! Our business philosophy is...
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