Gate-Emitter Leakage Current : | 100 nA |
Product Category : | IGBT Transistors |
Mounting Style : | Through Hole |
Continuous Collector Current at 25 C : | 60 A |
Pd - Power Dissipation : | 312 W |
Collector- Emitter Voltage VCEO Max : | 1600 V |
Package / Case : | TO-247-3 |
Maximum Operating Temperature : | + 175 C |
Maximum Gate Emitter Voltage : | 20 V |
Packaging : | Tube |
Configuration : | Single |
Collector-Emitter Saturation Voltage : | 2.35 V |
Manufacturer : | Infineon Technologies |
Description | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A |
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Product Specification
Gate-Emitter Leakage Current : | 100 nA | Product Category : | IGBT Transistors |
Mounting Style : | Through Hole | Continuous Collector Current at 25 C : | 60 A |
Pd - Power Dissipation : | 312 W | Collector- Emitter Voltage VCEO Max : | 1600 V |
Package / Case : | TO-247-3 | Maximum Operating Temperature : | + 175 C |
Maximum Gate Emitter Voltage : | 20 V | Packaging : | Tube |
Configuration : | Single | Collector-Emitter Saturation Voltage : | 2.35 V |
Manufacturer : | Infineon Technologies | Description | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company
Year Established:
2009
Employee Number:
600~800
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,LTD We have many good cooperation business relationship at home and abroad, and a good team together, We will continue to make great efforts to achieve a win-win future for our global customers! Our business philosophy is... Beijing Silk Road Enterprise Management Services Co.,LTD We have many good cooperation business relationship at home and abroad, and a good team together, We will continue to make great efforts to achieve a win-win future for our global customers! Our business philosophy is...
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