Beijing Silk Road Enterprise Management Services Co.,LTD
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Manufacturer of a wide range of products which include SI4835DDY-T1-E3,NTMFS0D6N03CT1G,IPP026N10NF2SAKMA1,etc
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| FET Type | P-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Drain to Source Voltage (Vdss) | 30 V |
| Vgs (Max) | ±25V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 15 V |
| Mounting Type | Surface Mount |
| Series | TrenchFET® |
| Supplier Device Package | 8-SOIC |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Power Dissipation (Max) | 2.5W (Ta), 5.6W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | SI4835 |
| Description | MOSFET P-CH 30V 13A 8SO |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 15 V |
| Series | - |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 280µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Rds On (Max) @ Id, Vgs | 0.62mOhm @ 30A, 10V |
| Mfr | onsemi |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta), 433A (Tc) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Description | MOSFET, POWER, SINGLE N-CHANNEL, |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.8V @ 169µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 100A, 10V |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tube |
| Drain to Source Voltage (Vdss) | 100 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 50 V |
| Mounting Type | Through Hole |
| Series | StrongIRFET™ 2 |
| Supplier Device Package | PG-TO220-3 |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 184A (Tc) |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | IPP026N |
| Description | TRENCH >=100V |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| FET Type | P-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Drain to Source Voltage (Vdss) | 30 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 1241 pF @ 15 V |
| Mounting Type | Surface Mount |
| Series | - |
| Supplier Device Package | TO-252-3 |
| Mfr | Diodes Incorporated |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Power Dissipation (Max) | 1.6W (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | DMP3028 |
| Description | MOSFET P-CH 30V 27A TO252 |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 900mA, 10V |
| FET Type | P-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Drain to Source Voltage (Vdss) | 200 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
| Mounting Type | Through Hole |
| Series | - |
| Supplier Device Package | TO-220AB |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Power Dissipation (Max) | 20W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | IRF9610 |
| Description | MOSFET P-CH 200V 1.8A TO220AB |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| FET Feature | - |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Series | TrenchFET® |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 17A, 4.5V |
| Mfr | Vishay Siliconix |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | SI4866 |
| Description | MOSFET N-CH 12V 11A 8SO |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| FET Feature | - |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Series | - |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.4A, 10V |
| Mfr | Vishay Siliconix |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 1.14W (Ta) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | SI3430 |
| Description | MOSFET N-CH 100V 1.8A 6TSOP |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tube |
| Drain to Source Voltage (Vdss) | 40 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 4730 pF @ 25 V |
| Mounting Type | Through Hole |
| Series | HEXFET®, StrongIRFET™ |
| Supplier Device Package | TO-220AB |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Power Dissipation (Max) | 143W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | IRFB7440 |
| Description | MOSFET N-CH 40V 120A TO220AB |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 240µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.9A, 10V |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Drain to Source Voltage (Vdss) | 600 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 400 V |
| Mounting Type | Surface Mount |
| Series | CoolMOS™ PFD7 |
| Supplier Device Package | PG-TO252-3-344 |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Power Dissipation (Max) | 64W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | IPD60R |
| Description | MOSFET N-CH 600V 16A TO252-3 |
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| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.7A, 10V |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Drain to Source Voltage (Vdss) | 600 V |
| Vgs (Max) | ±20V |
| Product Status | Active |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 400 V |
| Mounting Type | Surface Mount |
| Series | CoolMOS™ P7 |
| Supplier Device Package | PG-TO252-3 |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Power Dissipation (Max) | 30W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Base Product Number | IPD60R |
| Description | MOSFET N-CH 600V 6A TO252-3 |
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