 
                            
                            
                         
                        
 
                                    
| Payment Terms | T/T | 
| Supply Ability | 1000sets | 
| Delivery Time | 25 days after signing the contract | 
| Packaging Details | Wooden box packing | 
| VCES | 1200V | 
| IC nom | 450A | 
| ICRM | 900A | 
| Applications | Motor Drives | 
| Electrical Features | Low Switching Losses | 
| Brand Name | Infineon | 
| Model Number | FF450R12KT4 | 
| Place of Origin | China | 
View Detail Information
Explore similar products
 
                            Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A
 
                            Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5
 
                            1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C
 
                            Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench /
Product Specification
| Payment Terms | T/T | Supply Ability | 1000sets | 
| Delivery Time | 25 days after signing the contract | Packaging Details | Wooden box packing | 
| VCES | 1200V | IC nom | 450A | 
| ICRM | 900A | Applications | Motor Drives | 
| Electrical Features | Low Switching Losses | Brand Name | Infineon | 
| Model Number | FF450R12KT4 | Place of Origin | China | 
| High Light | high power igbt module ,automotive igbt | ||
half-bridge 62mm C-series 1200 V, 450 A dual IGBT modules FF450R12KT4 Wind Turbines
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines
Electrical Features
• Extended Operation Temperature Tvj op
• Low Switching Losses
• Low VCEsat
• Unbeatable Robustness
• VCEsat with positive Temperature Coefficient
Mechanical Features
• 4 kV AC 1min Insulation
• Package with CTI > 400
• High Creepage and Clearance Distances
• High Power Density
• Isolated Base Plate
• Standard Housing
IGBT,Inverter
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V | 
| Continuous DC collector current | TC = 100°C, Tvj max = 175°C Tvj max = 175°C | IC nom IC | 450 580 | A A | 
| Repetitive peak collector current | tP = 1 ms | ICRM | 900 | A | 
| Total power dissipation | TC = 25°C, Tvj max = 175°C | Ptot | 2400 | W | 
| Gate-emitter peak voltage | VGES | +/-20 | V | 
Characteristic Values
| Collector-emitter saturation voltage | IC = 450 A, VGE = 15 V Tvj = 25°C IC = 450 A, VGE = 15 V Tvj = 125°C IC = 450 A, VGE = 15 V Tvj = 150°C | VCE sat | 1,75 2,05 2,10 | 2,15 | V VV | |
| Gate threshold voltage | IC = 17,0 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,2 | 5,8 | 6,4 | V | 
| Gate charge | VGE = -15 V ... +15 V | QG | 3,60 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 1,9 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 28,0 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 1,10 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 5,0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 400 | nA | ||
| Turn-on delay time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | td on | 0,16 0,17 0,18 | µs µs µs | ||
| Rise time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | tr | 0,045 0,04 0,05 | µs µs µs | ||
| Turn-off delay time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | td off | 0,45 0,52 0,54 | µs µs µs | ||
| Fall time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | tf | 0,10 0,16 0,18 | µs µs µs | ||
| Turn-on energy loss per pulse | IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | Eon | 19,0 30,0 36,0 | 19,0 30,0 36,0 | ||
| Turn-off energy loss per pulse | IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | Eoff | 26,0 40,0 43,0 | mJ mJ mJ | ||
| SC data | VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C | ISC | 1800 | A | ||
| Thermal resistance, junction to case | IGBT / per IGBT | RthJC | 0,062 | K/W | ||
| Thermal resistance, caseto heatsink | EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) | RthCH | 0,03 | K/W | ||
| Temperature under switching conditions | Tvj op | -40 | 150 | °C | 
Company Details
Business Type:
Exporter,Trading Company,Seller 
Year Established:
2000 
Total Annual:
3 Million-4 Million
Ecer Certification:
Verified Supplier 
Our company Hontai Machinery and equipment (HK) Co. ltd focus is on steel mills, power plants, cement plant , chemicals, paper, CNC numerical control machine tool industry system spare parts! Main products: DCS system cards, spares of turbine ,generator ,boiler ,blower , coal mill , motor , transfor... Our company Hontai Machinery and equipment (HK) Co. ltd focus is on steel mills, power plants, cement plant , chemicals, paper, CNC numerical control machine tool industry system spare parts! Main products: DCS system cards, spares of turbine ,generator ,boiler ,blower , coal mill , motor , transfor...
Get in touch with us
Leave a Message, we will call you back quickly!