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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

  • China,Shenzhen ,Guangdong
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China MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G
China MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

  1. China MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G
  2. China MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

  1. MOQ: discussible
  2. Price: Discussible
  3. Get Latest Price
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 10000 pcs per month
Delivery Time 1-7work days
Packaging Details original
Drain-source resistance 0.1 Ω
Polarity P
Threshold voltage 0.4 V
Package SOT-23-3
Minimum package 3000
RoHS Standard RoHS Compliant
lead standard Lead Free
Brand Name original
Model Number LP2301BLT1G

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram Supply Ability 10000 pcs per month
Delivery Time 1-7work days Packaging Details original
Drain-source resistance 0.1 Ω Polarity P
Threshold voltage 0.4 V Package SOT-23-3
Minimum package 3000 RoHS Standard RoHS Compliant
lead standard Lead Free Brand Name original
Model Number LP2301BLT1G
High Light MOSFET NPN Transistor IC ChipTransistor IC Chip SOT-23LP2301BLT1G

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G

Products Description:

1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers

2.the material of product compliance withRoHS requirements and Halogen Free

3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable

4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ

5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ

6.Power management in note book Portable equipment Battery powered system Load switch DSC

MAXIMUM RATINGS(Ta = 25ºC)

Parameter Symbol Limits Unit
Drain–Source Voltage VDSS -20 V
Gate–to–Source Voltage – Continuous VGS ±8 V
Drain Current(Note 1)
– Continuous TA = 25°C
– Pulsed

ID

IDM

-2

-10

A

THERMAL CHARACTERISTICS

Parameter Symbol Limits Unit
Maximum Power Dissipation PD 0.7 W
Thermal Resistance,
junction–to–Ambient(Note 1)
RΘJA 175 C/W
Junction and Storage temperature TJ, Tstg −55∼+150 C

Technological Parameters:

Drain-source resistance 0.1 Ω
Polarity P
Threshold voltage 0.4 V
Drain-source voltage (Vds) 20 V
Continuous drain current (Ids) 2.8A
Package SOT-23-3
Minimum package 3000
RoHS Standard RoHS Compliant
lead standard Lead Free
pin number 6

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company,Seller,Other

  • Year Established:

    2000

  • Employee Number:

    50~100

  • Ecer Certification:

    Verified Supplier

Since 2000, provide active and passive components, like IC chips,capacitors,resistors, diodes, transistors, and other parts. Original & Brand new parts with timely effective technical support services to meet customers' needs. Business operating markets are designed in multiple countries aro... Since 2000, provide active and passive components, like IC chips,capacitors,resistors, diodes, transistors, and other parts. Original & Brand new parts with timely effective technical support services to meet customers' needs. Business operating markets are designed in multiple countries aro...

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Get in touch with us

  • Reach Us
  • SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
  • Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
  • https://www.electronic-ics.com/

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