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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

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China Multifunctional Transistor N Channel MOSFET , 55V 110A IRF3205 Electronic
China Multifunctional Transistor N Channel MOSFET , 55V 110A IRF3205 Electronic

  1. China Multifunctional Transistor N Channel MOSFET , 55V 110A IRF3205 Electronic

Multifunctional Transistor N Channel MOSFET , 55V 110A IRF3205 Electronic

  1. MOQ: 1
  2. Price: Negotiable
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Part no. IRF3205
Product Category MOSFET
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 55 V
Continuous current 110A
Condition New
Stock In Stock
Brand Name Original
Model Number IRF3205

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  1. Product Details
  2. Company Details

Product Specification

Part no. IRF3205 Product Category MOSFET
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 55 V
Continuous current 110A Condition New
Stock In Stock Brand Name Original
Model Number IRF3205
High Light Multifunctional Transistor N Channel MOSFET55V Transistor N Channel MOSFETIRF3205

Discover the Versatile IRF3205 MOSFET Transistor

Revolutionize Your Electronic Circuits with IRF3205 MOSFET Transistor

 

IRF3205 is a powerful and reliable N-channel MOSFET transistor that is commonly used in electronic circuits where high power switching is required. This MOSFET has a maximum voltage rating of 55 volts and can handle a continuous current of up to 110 amps. Its low on-state resistance of only 8 milliohms means that it dissipates very little power even when used in high current applications. The IRF3205 is a great choice for power supplies, motor control, and other applications requiring high current and high voltage switching.

 

 

Technical features:

  • Product Category: MOSFET
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 55 V
  • Id - Continuous Drain Current: 110 A
  • Rds On - Drain-Source Resistance: 8 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 200 W
  • Channel Mode: Enhancement
  • Brand: Infineon / IR
  • Configuration: Single
  • Fall Time: 65 ns
  • Height: 15.65 mm
  • Length: 10 mm
  • Product Type: MOSFET
  • Rise Time: 101 ns
  • Subcategory: MOSFETs
  • Transistor Type: 1 N-Channel
  • Typical Turn-Off Delay Time: 50 ns
  • Typical Turn-On Delay Time: 14 ns
  • Width: 4.4 mm Unit
  • Weight: 0.068784 oz

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Exporter,Trading Company,Seller

  • Year Established:

    2008

  • Employee Number:

    25~30

  • Ecer Certification:

    Verified Supplier

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD is a professional electronic components supplier and distributor. We have been providing multiple items - Cooling Fans, Power Supply Units, LCD Displays PCB and PCBA Control Boards, AC Cords and Cables, IC Chips, Test Fixtures, Power Module, RF, Capacitor, Re... SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD is a professional electronic components supplier and distributor. We have been providing multiple items - Cooling Fans, Power Supply Units, LCD Displays PCB and PCBA Control Boards, AC Cords and Cables, IC Chips, Test Fixtures, Power Module, RF, Capacitor, Re...

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Get in touch with us

  • Reach Us
  • SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
  • Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
  • https://www.electronicic-chips.com/

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