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China factory - ChongMing Group (HK) Int'l Co., Ltd

ChongMing Group (HK) Int'l Co., Ltd

  • China,Shenzhen
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China MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT
China MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT

  1. China MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT

MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7800pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description RF Mosfet TO-270-2 GULL
Drain–Source Voltage 68 Vdc
Gate–Source Voltage –0.5, +15 Vdc
Storage Temperature Range –65 to +200 °C
Operating Junction Temperature 200 °C
Input Capacitance 49.5 pF
Output Capacitance 26.5 pF
Brand Name
Model Number MRF9030
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7800pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description RF Mosfet TO-270-2 GULL Drain–Source Voltage 68 Vdc
Gate–Source Voltage –0.5, +15 Vdc Storage Temperature Range –65 to +200 °C
Operating Junction Temperature 200 °C Input Capacitance 49.5 pF
Output Capacitance 26.5 pF Brand Name
Model Number MRF9030 Certification new & original
Place of Origin original factory
High Light power mosfet icsilicon power transistors

 

The RF Sub–Micron MOSFET Line

RF POWER FIELD EFFECT TRANSISTORS

N–Channel Enhancement–Mode Lateral MOSFETs 

 

945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

 

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

• Typical Two–Tone Performance at 945 MHz, 26 Volts

      Output Power — 30 Watts PEP

      Power Gain — 19 dB

      Efficiency — 41.5%

      IMD — –32.5 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

 

 

MAXIMUM RATINGS

Rating Symbol Value Unit
Drain–Source Voltage VDSS 68 Vdc
Gate–Source Voltage VGS –0.5, +15 Vdc

Total Device Dissipation @ TC = 25°C MRF9030R1

Derate above 25°C

PD

92

0.53

Watts

W/°C

Total Device Dissipation @ TC = 25°C MRF9030SR1

Derate above 25°C

PD

117

0.67

Watts

W/°C

Storage Temperature Range Tstg –65 to +200 °C
Operating Junction Temperature TJ 200 °C

 

PACKAGE DIMENSIONS

 

 

 

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Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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Get in touch with us

  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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