Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8500pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | N-Channel 600 V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB |
Drain-source Voltage (VGS = 0) | 600 V |
Gate-source Voltage | ± 20 V |
Drain Current (pulsed) | 14 A |
Peak Diode Recovery voltage slope | 3 V/ns |
Storage Temperature | -65 to 150 ℃ |
Max. Operating Junction Temperature | 150 ℃ |
Brand Name | |
Model Number | IRFBC30 |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8500pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | N-Channel 600 V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB | Drain-source Voltage (VGS = 0) | 600 V |
Gate-source Voltage | ± 20 V | Drain Current (pulsed) | 14 A |
Peak Diode Recovery voltage slope | 3 V/ns | Storage Temperature | -65 to 150 ℃ |
Max. Operating Junction Temperature | 150 ℃ | Brand Name | |
Model Number | IRFBC30 | Certification | new & original |
Place of Origin | original factory | ||
High Light | npn smd transistor ,multi emitter transistor |
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET
TYPE | VDSS | RDS(on) | ID |
IRFBC30 | 600 V | < 2.2 Ω | 3.6 A |
TO-220
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 600 | V |
VDGR | Drain- gate Voltage (RGS = 20 kΩ) | 600 | V |
VGS | Gate-source Voltage | ± 20 | V |
ID | Drain Current (continuous) at Tc = 25 ℃ | 3.6 | A |
ID | Drain Current (continuous) at Tc = 100 ℃ | 2.3 | A |
IDM (•) | Drain Current (pulsed) | 14 | A |
Ptot | Total Dissipation at Tc = 25 ℃ | 75 | W |
Derating Factor | 0.6 | W/℃ | |
dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns |
Tstg | Storage Temperature | -65 to 150 | ℃ |
Tj | Max. Operating Junction Temperature | 150 | ℃ |
(•) Pulse width limited by safe operating area
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
TO-220 MECHANICAL DATA
Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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