Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 10000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | MOSFET N-CH 55V 3.1A SOT223 |
Pulsed Drain Current | 12 A |
Linear Derating Factor | 8.3 mW/°C |
Gate-to-Source Voltage | ±16 V |
Single Pulse Avalanche Energy | 120 mJ |
Avalanche Current | 3.1 A |
Junction and Storage Temperature | -55 to + 150 °C |
Brand Name | |
Model Number | IRLL024NTRPBF |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | MOSFET N-CH 55V 3.1A SOT223 | Pulsed Drain Current | 12 A |
Linear Derating Factor | 8.3 mW/°C | Gate-to-Source Voltage | ±16 V |
Single Pulse Avalanche Energy | 120 mJ | Avalanche Current | 3.1 A |
Junction and Storage Temperature | -55 to + 150 °C | Brand Name | |
Model Number | IRLL024NTRPBF | Certification | new & original |
Place of Origin | original factory | ||
High Light | multi emitter transistor ,silicon power transistors |
IRLL024NPbF HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter | Max. | Units | |
---|---|---|---|
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** | 4.4 | A |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* | 3.1 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* | 2.5 | A |
IDM | Pulsed Drain Current | 12 | A |
PD @TA = 25°C | Power Dissipation (PCB Mount)** | 2.1 | W |
PD @TA = 25°C | Power Dissipation (PCB Mount)* | 1.0 | W |
Linear Derating Factor (PCB Mount)* | 8.3 | mW/°C | |
VGS | Gate-to-Source Voltage | ± 16 | V |
EAS | Single Pulse Avalanche Energy | 120 | mJ |
IAR | Avalanche Current | 3.1 | A |
EAR | Repetitive Avalanche Energy* | 0.1 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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