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China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components
China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components

  1. China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components
  2. China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components
  3. China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components
  4. China 2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components

2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components

  1. MOQ: 25pcs
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T
Delivery Time In 30 days
Packaging Details Customized Box
Material InSb-Te
Diameter 2''
Dopant Te
Orientation (111)+/-0.5°
Thickness 510+/-25um
TTV ≤10um
Growth method CZ
Mobility >100000@77K
Application Semiconductor Substrates
Brand Name ZMSH
Model Number InSb-Te Substrates
Certification ROHS
Place of Origin China

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Product Specification

Payment Terms T/T Delivery Time In 30 days
Packaging Details Customized Box Material InSb-Te
Diameter 2'' Dopant Te
Orientation (111)+/-0.5° Thickness 510+/-25um
TTV ≤10um Growth method CZ
Mobility >100000@77K Application Semiconductor Substrates
Brand Name ZMSH Model Number InSb-Te Substrates
Certification ROHS Place of Origin China
High Light 2" InSb-Te EPI SubstratesGaP Semiconductor SubstratesEPI Indium Phosphide Wafer

2’’ InSb-Te EPI Substrates Narrow Band Gap Semiconductor Substrates Hall Components

 

Description of InSb-Te:

Indium antimonide (InSb), as a kind of group ⅲ-V binary compound semiconductor material, has been the focus of research in the field of semiconductor materials since its discovery with stable physical and chemical properties and excellent process compatibility. InSb has a very narrow band gap, a very small electron effective mass and a very high electron mobility, especially noteworthy is that it belongs to the intrinsic absorption in the spectral range of 3-5 μm, with nearly 100 percent quantum efficiency, making it the preferred material for the preparation of medium-wave infrared detectors, and the application prospect and commercial demand are huge.The lattice structure size of te atom and sb atom is close to each other, and the valence electron shell structure is also close to each other. te atom is doped as a substitute to replace sb in the crystal and plays the role of donor. It was found that the CZ-pull method could be used to prepare insb body materials with a certain te doping concentration, and the addition of te could change the conductive type of insb crystals, and also had an important impact on the electrical and optical properties of the materials. Relevant studies laid the experimental foundation for the spatial growth of Te Doped InSb.

 

Features of InSb-Te:

High carrier concentration It has higher electrical conductivity and low resistivity in electronic devices.
High carrier mobility It describes the carriers in a material to move under an electric field.
Determine the nature Tellurium doping can increase the heat of InSb crystal materials‘ Stability.
Light absorption Tellurium doping can change the band junctions of InSb crystals Structure.
Light emission Te-doped InSb can be stimulated to produce light emission by
external excitation or electron injection.
Compatibility The TE-doped InSb substrate has good lattice matching with other semiconductors.
Thermal stability Tellurium doping can improve the thermal stability of InSb materials.
Optical property Tellurium doping also has a certain effect on
the optical properties of InSb materials

 

Technical Parameters of InSb-Te:

Parameter

InSb-Te-2in-510um-PP

Growth method

CZ

Dopant

Te

Orientation

(111)+/-0.5°

Orientation angle

N/A

Edge rounding

0.25

Diameter

50.5+/-0.5

Thickness

510+/-25

OF orientaiton

EJ[01-1]+/-0.5°

OF length

16+/-2

IF orientation

EJ[01-1]+/-0.5°

IF length

8+/-1

CC

0.4-1.4E5@77K

Mobility

>100000@77K

EPD-AVE

≤50

TTV

≤10

TIR

≤10

BOW

≤10

Warp

≤15

Front Surface

Polished

Back side surface

Polished

Pachaging

Single tray

 

 

Applicstions of InSb-Te:

1. High-speed electronic devices: tellurium-doped InSb crystals also have potential in high-speed electronic devices.

 

2. Quantum structure devices: InSb crystals doped with Te can be used to prepare quantum structure devices, such as

quantum Wells and quantum dot devices.

 

3. Optoelectronic devices: InSb crystals doped with Te can be used to prepare various optoelectronic devices, such as

photodetectors, photoelectric amplifiers and photoelectric converters.

 

4. Infrared detector: InSb crystals doped with Te can be used to prepare high-performance infrared detectors. Because

tellurium doping can increase the carrier concentration and carrier mobility.

 

5. Infrared lasers: InSb crystals doped with Te also have application potential in the field of infrared lasers. By introducing

tellurium doping into InSb crystals, the band structure of INSB crystals can realize the work of infrared lasers.

 

 

 

 

Other Related Product to InSb-Te:

SIC Substrate:

 

 

FAQ:

Q: What is the Brand Name of Te-InSb?

A: The Brand Name of Te-InSb is ZMSH.

 

Q: What is the Certification of Te-InSb?

A: The Certification of Te-InSb is ROHS.

 

Q: Where is the Place of Origin of Te-InSb?

A: The Place of Origin of Te-InSb is CHINA.

 

Q: What is the MOQ of Te-InSb at one time?

A: The MOQ of Te-InSb is 25pcs at one time.

 

 

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
  • MrWang
  • 15801942596
  • https://www.galliumnitridewafer.com/

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