SHANGHAI FAMOUS TRADE CO.,LTD
| Supply Ability | 1000pcs/month |
| Delivery Time | 3-4weeks |
| Packaging Details | single wafer case |
| Materials | InP single crystal |
| industry | semiconductor substrates，device， |
| color | black |
| type | semi- type |
| diameter | 100mm 4inch |
| thickness | 625um or 350um |
| package | single wafer case |
| Brand Name | zmkj |
| Model Number | InP-2INCH |
| Place of Origin | CHINA |
View Detail Information
Explore similar products
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
GaSb
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Product Specification
| Supply Ability | 1000pcs/month | Delivery Time | 3-4weeks |
| Packaging Details | single wafer case | Materials | InP single crystal |
| industry | semiconductor substrates，device， | color | black |
| type | semi- type | diameter | 100mm 4inch |
| thickness | 625um or 350um | package | single wafer case |
| Brand Name | zmkj | Model Number | InP-2INCH |
| Place of Origin | CHINA | ||
| High Light | 50mm indium Phosphide Wafer ，Semi Insulating indium Phosphide Wafer ，n type inp wafer | ||
2inch dia50.8mm n-type dummy prime grade InP indium Phosphide Wafer
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer
InP introduce
| InP single crystal | |
| |
|
growth (modified Czochralski method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal. to a thermal baffle technology in connection with a numerical modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule | |
Specification
Fe Doped InP
Semi-Insulating InP Specifications
Note: Other Specifications maybe available upon request
n- and p-type InP
Semi-conducting InP Specifications
| Growth Method | VGF |
| Dopant | n-type: S, Sn AND Undoped; p-type: Zn |
| Wafer Shape | Round (DIA: 2", 3", AND 4") |
| Surface Orientation | (100)±0.5° |
*Other Orientations maybe available upon request
| Dopant | S & Sn (n-type) | Undoped (n-type) | Zn (p-type) |
| Carrier Concentration (cm-3) | (0.8-8) × 1018 | (1-10) × 1015 | (0.8-8) ×1018 |
| Mobility (cm2/V.S.) | (1-2.5) × 103 | (3-5) × 103 | 50-100 |
| Etch Pitch Density (cm2) | 100-5,000 | ≤ 5000 | ≤ 500 |
| Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
| Thickness (µm) | 350±25 | 625±25 | 625±25 |
| TTV [P/P] (µm) | ≤ 10 | ≤ 10 | ≤ 10 |
| TTV [P/E] (µm) | ≤ 10 | ≤ 15 | ≤ 15 |
| WARP (µm) | ≤ 15 | ≤ 15 | ≤ 15 |
| OF (mm) | 17±1 | 22±1 | 32.5±1 |
| OF / IF (mm) | 7±1 | 12±1 | 18±1 |
| Polish* | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P |
*E=Etched, P=Polished
Note: Other Specifications maybe available upon request
| InP Wafer processing | |
| |
| Each ingot is cut into wafers which are lapped, polished and surface prepared for epitaxy. The overall process is detailed hereunder. | |
| |
| Flat specification and identification | The orientation is indicated on the wafers by two flats (long flat for orientation, small flat for identification). Usually the E.J. standard (European-Japanese) is used. The alternate flat configuration (U.S.) is mostly used for Ø 4" wafers. |
| |
| Orientation of the boule | Either exact (100) or misoriented wafers are offered. |
| |
| Accuracy of the orientation of OF | In response to the needs of the optoelectronic industry, we offers wafers with excellent accuracy of the OF orientation : < 0.02 degrees. This feature is an important benefit to customers making edge-emitting lasers and also to manufacturers who cleave to separate dies allowing their designers to reduce the real-estate wasted in the streets. |
| |
| Edge profile | There are two common specs : chemical edge processing or mechanical edge processing (with an edge grinder). |
| |
| Polishing | Wafers are polished by means of a chemical-mechanical process resulting in a flat, damage-free surface. we provides both double-side polished and single-side polished (with lapped and etched back side) wafers. |
| |
| Final surface preparation and packaging | Wafers go through many chemical steps to remove the oxide produced during polishing and to create a clean surface with stable and uniform oxide layer that is ready for epitaxial growth - epiready surface and that reduces trace elements to extremely low levels . After final inspection, the wafers are packaged in a way that maintains the surface cleanliness. Specific instructions for oxide removal are available for all types of epitaxial technologies (MOCVD, MBE). |
Package ＆ delivery
FAQ:
Q: What's your MOQ and delivery time?
A: (1) For inventory, the MOQ is 5 pcs.
(2) For customized products, the MOQ is 10-30 pcs up.
(3) For customized products,the delivery time in 10days, custiomzed size for 2-3weeks
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!