SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 WEEKS |
| Wafer Size | 4 inch diameter × 0.525 mm thickness |
| Wafer Type | Prime Grade, N-type, P-doped |
| Crystalline Orientation | <100> |
| Ti Adhesion Layer Thickness | 100 nm |
| Cu Conductive Layer Thickness | 200 nm |
| Cu Film Structure | Polycrystalline, uniform deposition |
| Electrical Resistivity | 1–10 Ω·cm |
| Surface Roughness | As-grown (typical, not specified) |
| Deposition Method | High-vacuum PVD (sputtering or e-beam) |
| Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 WEEKS |
| Wafer Size | 4 inch diameter × 0.525 mm thickness | Wafer Type | Prime Grade, N-type, P-doped |
| Crystalline Orientation | <100> | Ti Adhesion Layer Thickness | 100 nm |
| Cu Conductive Layer Thickness | 200 nm | Cu Film Structure | Polycrystalline, uniform deposition |
| Electrical Resistivity | 1–10 Ω·cm | Surface Roughness | As-grown (typical, not specified) |
| Deposition Method | High-vacuum PVD (sputtering or e-beam) | Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA | ||
| High Light | 4-inch N-Type Si wafer ，P-Doped Si wafer with Cu film ，Ti/Silicon wafer with thin film | ||
This 4-inch (100 mm) N-type, P-doped silicon wafer with <100> crystalline orientation is coated with a 100 nm Titanium (Ti) adhesion layer and a 200 nm Copper (Cu) conductive layer.
The Ti layer serves as a strong adhesion buffer and diffusion barrier, improving Cu film attachment and thermal stability. The Cu layer provides high electrical conductivity, making this wafer suitable for microelectronics, MEMS devices, sensors, and research applications.
The wafer is single-side polished (SSP) and supplied in cleanroom packaging to ensure contamination-free handling for precision applications.
The thin-film structure is optimized to achieve uniform thickness, consistent electrical performance, and reliable adhesion. The wafer is ideal for applications requiring a high-quality Cu/Ti interface on silicon substrates.
| Parameter | Specification |
|---|---|
| Wafer Size | 4 inch diameter × 0.525 mm thickness |
| Wafer Type | Prime Grade, N-type, P-doped |
| Crystalline Orientation | <100> |
| Polishing | Single Side Polished (SSP) |
| Ti Adhesion Layer Thickness | 100 nm |
| Cu Conductive Layer Thickness | 200 nm |
| Cu Film Structure | Polycrystalline, uniform deposition |
| Electrical Resistivity | 1–10 Ω·cm |
| Surface Roughness | As-grown (typical, not specified) |
| Deposition Method | High-vacuum PVD (sputtering or e-beam) |
| Package | Single wafer in 100-class plastic bag inside 1000-class cleanroom |
Semiconductor interconnect layers
MEMS microstructures and electrodes
Sensor devices and contact pads
Research and development in thin-film electronics
High-conductivity test wafers for microfabrication
Ti adhesion layer ensures strong Cu-Si bonding
200 nm Cu layer provides low-resistance conductive path
Ti layer acts as a diffusion barrier to improve thermal stability
PVD deposition ensures consistent thickness and surface quality
Cleanroom packaging maintains wafer cleanliness and integrity
Handle in cleanroom or low-dust environment
For high-temperature processing, optimize conditions to prevent Cu/Si interdiffusion
Store in a dry, low-stress environment to maintain thin-film integrity
Avoid direct contact with the coated surface
1. What is the uniformity of the Cu/Ti thin films on the wafer?
The Ti adhesion layer and Cu conductive layer are deposited using high-vacuum PVD techniques, ensuring uniform thickness across the 4-inch wafer. The Cu film thickness is 200 nm and Ti layer is 100 nm, with minimal variation suitable for microelectronics and research applications.
2. Can this wafer be used in high-temperature processes?
Yes, but precautions are recommended. The Ti layer acts as a diffusion barrier to prevent Cu from diffusing into the silicon substrate. Optimizing temperature and processing conditions is advised to maintain film integrity and uniformity.
3. How should the wafer be stored and handled?
The wafer should be handled in a cleanroom or low-dust environment to avoid contamination. Store in a dry, low-stress environment. Avoid touching the coated surface directly. Each wafer is supplied in a 100-class plastic bag inside a 1000-class cleanroom package.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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