FP Epiwafer InP Substrate Contact Layer InGaAsP Dia 2 3 4 Inch For OCT 1.3um

Product Specification

FP epiwafer InP substrate contact layer InGaAsP Dia 2 3 4 inch for OCT 1.3um wavelength band

FP epiwafer InP substrate's Brief

Fabry-Perot (FP) epiwafers on Indium Phosphide (InP) substrates are key components in the development of optoelectronic devices, particularly laser diodes used in optical communication and sensing applications. InP substrates provide an ideal platform due to their high electron mobility, direct bandgap, and excellent lattice matching for epitaxial growth. These wafers typically feature multiple epitaxial layers, such as InGaAsP, that form the FP laser cavity and are designed to emit light in the critical 1.3 μm to 1.55 μm wavelength bands, making them highly effective for fiber-optic communication.

FP lasers, grown on these epiwafers, are known for their relatively simple structure compared to other laser types, like Distributed Feedback (DFB) lasers, which makes them a cost-effective solution for many applications. These lasers are widely used in short-to-medium range optical communication systems, data center interconnects, and sensing technologies such as gas detection and medical diagnostics.

InP-based FP epiwafers provide flexibility in wavelength selection, good performance, and lower production costs, making them a vital component in the growing fields of telecommunications, environmental monitoring, and integrated photonic circuits.

FP epiwafer InP substrate's data sheet

FP epiwafer InP substrate's diagram

FP epiwafer InP substrate's properties

InP Substrate

• Lattice Constant: 5.869 Å, providing excellent lattice matching with materials like InGaAsP, minimizing defects in epitaxial layers.
• Direct Bandgap: 1.344 eV (corresponding to ~0.92 μm emission wavelength), ideal for optoelectronic applications, especially in the infrared spectrum.
• High Electron Mobility: 5400 cm²/V·s, enabling high-speed, high-frequency device performance, crucial for communication technologies.
• Thermal Conductivity: 0.68 W/cm·K, providing adequate heat dissipation for devices like lasers.

Epitaxial Layers

• Active Region: Typically made from InGaAsP or related compounds, these layers emit light in the 1.3 μm to 1.55 μm wavelength bands, essential for fiber-optic communication.
• Multiple Quantum Wells: These may be used to enhance the performance of the FP laser, improving efficiency and modulation speeds.
• Doping: The epitaxial layers are doped (n-type or p-type) to facilitate charge injection and ensure low-resistance ohmic contacts.

Optical Properties

• Emission Wavelength: Typically in the 1.3 μm to 1.55 μm range, these are the ideal wavelengths for telecom applications due to low-loss transmission in optical fibers.
• Reflective Facets: FP lasers use naturally reflective facets to form the laser cavity, simplifying fabrication and reducing costs.

Cost-Effectiveness

• FP epiwafers on InP substrates offer a simpler structure compared to more complex laser types (e.g., DFB lasers), reducing manufacturing costs while maintaining good performance for short-to-medium range communication.

These properties make FP epiwafers on InP substrates highly suitable for use in optical communication systems, sensing devices, and photonic integrated circuits.

FP epiwafer InP substrate's application

Fiber Optic Communication

• Laser Diodes: FP lasers on InP epiwafers are widely used in fiber optic communication systems, particularly in short to medium-range data transmission. They operate in the 1.3 μm to 1.55 μm wavelength range, which corresponds to the low-loss windows of optical fibers, making them ideal for high-speed data transmission.
• Transceivers and Optical Modules: FP lasers are commonly integrated into optical transceivers used in data centers and telecommunication networks to transmit and receive optical signals.

Data Center Interconnects

• High-Speed Connectivity: InP-based FP lasers are utilized in data centers for interconnects between servers and network devices, providing high-speed, low-latency optical links essential for handling large volumes of data.

Optical Sensing

• Gas Detection: FP lasers can be tuned to specific wavelengths to detect gases such as CO2, CH4, and other industrial or environmental pollutants through infrared absorption.
• Environmental Monitoring: FP lasers on InP substrates are employed in sensors for air quality monitoring, detecting hazardous gases, and industrial safety systems.

Medical Diagnostics

• Optical Coherence Tomography (OCT): InP-based lasers are used in OCT systems for non-invasive imaging, commonly applied in ophthalmology for detailed retinal scans and in dermatology for tissue imaging.

FP epiwafer InP substrate's photos

Q&A

What is EPI in wafer?

EPI in wafer technology stands for Epitaxy, which refers to the process of depositing a thin layer of crystalline material (epitaxial layer) onto a semiconductor substrate (such as silicon or InP). This epitaxial layer has the same crystallographic structure as the underlying substrate, allowing for high-quality, defect-free growth that is essential for the fabrication of advanced semiconductor devices.