Payment Terms | T/T |
Delivery Time | 2-4weeks |
PL Wavelength control | Better than 3nm |
PL Wavelength uniformity | Std, Dev better than inm @inner 42mm |
Thickness control | Betterthan ±3% |
Thickness uniformity | Better than ± 3% @inner 42mm |
Doping control | Better than ±10% |
P-InP doping (cm-*) | Zn doped: 5e17 to 2e18 |
Peak Wavelength | 1310nm |
Threshold Current | <8 |
Front Power | >9 |
Brand Name | ZMSH |
Place of Origin | China |
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Product Specification
Payment Terms | T/T | Delivery Time | 2-4weeks |
PL Wavelength control | Better than 3nm | PL Wavelength uniformity | Std, Dev better than inm @inner 42mm |
Thickness control | Betterthan ±3% | Thickness uniformity | Better than ± 3% @inner 42mm |
Doping control | Better than ±10% | P-InP doping (cm-*) | Zn doped: 5e17 to 2e18 |
Peak Wavelength | 1310nm | Threshold Current | <8 |
Front Power | >9 | Brand Name | ZMSH |
Place of Origin | China | ||
High Light | 2 inch InP substrate ,1.55 µm InP substrate ,1.3 µm InP substrate |
DFB Epiwafer InP substrate MOCVD method 2 4 6 inch Operating wavelength: 1.3 µm, 1.55 µm
DFB Epiwafer InP substrate's Brief
DFB (Distributed Feedback) Epiwafers on Indium Phosphide (InP) substrates are key components used in fabricating high-performance DFB laser diodes. These lasers are critical for optical communication and sensing applications due to their ability to produce single-mode, narrow-linewidth light with stable wavelength emission, typically in the 1.3 µm and 1.55 µm ranges.
The InP substrate provides excellent lattice matching for epitaxial layers such as InGaAsP, which are grown to form the active region, cladding layers, and grating structures that define the DFB laser's functionality. The integrated grating within the structure ensures precise feedback and wavelength control, making it suitable for long-distance fiber-optic communication and WDM (Wavelength Division Multiplexing) systems.
Key applications include high-speed optical transceivers, data center interconnects, gas sensing, and optical coherence tomography (OCT). The InP-based DFB epiwafer's combination of high-speed performance, narrow spectral linewidth, and wavelength stability makes it indispensable in modern telecommunication networks and advanced sensing technologies.
DFB Epiwafer InP substrate's structure
DFB Epiwafer InP substrate's datasheet(ZMSH DFB inp epiwafer.pdf)
DFB Epiwafer InP substrate's properties
Substrate Material:
Bandgap:
Lattice Matching:
Epitaxial Layers:
Operating Wavelength:
Narrow Linewidth and Single-Mode Operation:
Temperature Stability:
Low Threshold Current:
High-Speed Modulation Capability:
The key properties of DFB Epiwafers on InP substrates, such as their excellent lattice matching, single-mode operation, narrow linewidth, high-speed performance, and temperature stability, make them indispensable for optical communication, sensing, and advanced photonic applications.
DFB Epiwafer InP substrate's real photos
DFB Epiwafer InP substrate's application
Key worlds: InP substrate DFB epiwafer
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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