| Payment Terms | T/T |
| Supply Ability | 1000pcs per month |
| Delivery Time | 3-6 months |
| Packaging Details | package in 100-grade cleaning room |
| X-ray System | X-ray Tube |
| Sample Size | Wafer: 2–12 inch; Ingot: ≤200 mm (diameter) × 500 mm (length) |
| Angular Range | θ: -10° to +50°, 2θ: -10° to +110° |
| Orientation Accuracy | ±10″–±30″ (high-precision models: ±3″) |
| Multi-axis Motion | X/Y/Z-axis positioning, 360° rotation ±15°, tilt control |
| Scanning Speed | Full orientation in 10 sec (fully automated) |
| Applications | Semiconductor Manufacturing, Optical Material Processing |
| Brand Name | ZMSH |
| Model Number | Wafer Orientation Instrument |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs per month |
| Delivery Time | 3-6 months | Packaging Details | package in 100-grade cleaning room |
| X-ray System | X-ray Tube | Sample Size | Wafer: 2–12 inch; Ingot: ≤200 mm (diameter) × 500 mm (length) |
| Angular Range | θ: -10° to +50°, 2θ: -10° to +110° | Orientation Accuracy | ±10″–±30″ (high-precision models: ±3″) |
| Multi-axis Motion | X/Y/Z-axis positioning, 360° rotation ±15°, tilt control | Scanning Speed | Full orientation in 10 sec (fully automated) |
| Applications | Semiconductor Manufacturing, Optical Material Processing | Brand Name | ZMSH |
| Model Number | Wafer Orientation Instrument | Certification | rohs |
| Place of Origin | CHINA | ||
| High Light | Cutting Angle Determination Wafer Orientation Instrument ,High Precision Wafer Orientation Instrument | ||
XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination
A wafer orientation instrument is a high-precision device based on X-ray diffraction (XRD) technology, designed for semiconductor and optical material industries to determine crystal lattice orientation and cutting angles. Its core components include:
| Parameter Category | Parameter | Specifications/Description |
| X-ray System | X-ray Tube | Copper (Cu) target, focal spot 0.4×1 mm, air-cooled |
| X-ray Voltage/Current | 30 kV, 0–5 mA adjustable | |
| Detector Type | Geiger-Müller tube (low energy) or scintillation counter (high energy) | |
| Time Constant | 0.1/0.4/3 sec adjustable | |
| Goniometer | Sample Size | Wafer: 2–12 inch; Ingot: ≤200 mm (diameter) × 500 mm (length) |
| Angular Range | θ: -10° to +50°, 2θ: -10° to +110° | |
| Orientation Accuracy | ±10″–±30″ (high-precision models: ±3″) | |
| Angular Resolution | Minimum reading: 1″ (digital) or 10″ (scale) | |
| Scanning Speed | Full orientation in 10 sec (fully automated) | |
| Automation & Control | Sample Stage | V-groove (2–8 inch wafers), edge/OF alignment, 1–50 kg capacity |
| Multi-axis Motion | X/Y/Z-axis positioning, 360° rotation ±15°, tilt control | |
| Interface | PLC/RS232/Ethernet, MES-compatible | |
| Physical Specifications | Dimensions | 1130×650×1200 mm (L×W×H) |
| Weight | 150–300 kg | |
| Power Requirements | Single-phase 220V±10%, 50/60 Hz, ≤0.5 kW | |
| Noise Level | <65 dB (operating) | |
| Advanced Features | Closed-loop Tension Control | Real-time monitoring, 0.1–1.0 MPa tension regulation |
| AI-driven Optimization | Defect detection, predictive maintenance alerts | |
| Multi-material Compatibility | Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG) |
The device operates through X-ray diffraction and Omega scanning technologies:
1. X-ray Diffraction:
2. Omega Scanning:
3. Automated Control:
| Feature
| Description
| Technical Parameters/Case Studies
|
| Ultra-High Precision
| Omega scanning accuracy ±0.001°, Rocking Curve FWHM resolution <0.005°
| Silicon carbide wafer cutting error ≤±0.5°
|
| High-Speed Measurement | Single-scan acquisition of all crystallographic data, 200× faster than manual
| Silicon wafer batch testing: 120 wafers/hour
|
| Multi-Material Compatibility | Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG)
| Applicable materials: SiC, GaN, quartz, garnet
|
| AI Integration
| Deep learning algorithms for defect detection, real-time process optimization
| Defect sorting reduces scrap rate to <1%
|
| Modular Design
| Expandable X-Y platform for 3D mapping or EBSD integration
| Silicon wafer dislocation density detection ≤100 cm⁻²
|
1. Semiconductor Manufacturing:
2. Optical Material Processing:
3. High-Temperature Alloys & Ceramics:
4. Research & Quality Control:
1. Q: How to calibrate a wafer orientation instrument?
A: Calibration involves aligning the X-ray source and detector using reference crystals, typically requiring <0.001° angular accuracy and automated software adjustments for precision.
2. Q: What is the typical accuracy of a wafer orientation instrument?
A: High-end models achieve ±0.001° precision, critical for semiconductor wafer cutting and crystal defect analysis in industries like photovoltaics and advanced ceramics.
Tags: #Wafer Orientation Instrument, #XRD-Based, #Sapphire, #SiC, #High-Precision Cutting, # Angle Determination
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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