Shaanxi KeGu New Material Technology Co., Ltd
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
| Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping |
| Material | SiC |
| Composition:SiC | >98% |
| Color | Black |
| Density | >3.05g/cm3 |
| Max. Service Temp | 1650°C |
| Flexural Strength | 380MPa |
| Brand Name | KeGu |
| Place of Origin | China |
| Model Number | Customizable |
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Product Specification
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram | Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping | Material | SiC |
| Composition:SiC | >98% | Color | Black |
| Density | >3.05g/cm3 | Max. Service Temp | 1650°C |
| Flexural Strength | 380MPa | Brand Name | KeGu |
| Place of Origin | China | Model Number | Customizable |
| High Light | Icp Etching Wafer Holder Sic Plate ，Wafer Holder Silicon Carbide Plate ，Led Industry Sic Plate | ||
Overview:
Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures. These properties make our SiC trays the ideal solution for demanding semiconductor applications, ensuring process integrity and high yield.
Key Material Advantages:
Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer.
Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life.
High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads.
Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling.
Silicon Carbide (SiC) Material Properties
| Property | Value |
|---|---|
| Compound Formula | SiC |
| Molecular Weight | 40.1 |
| Appearance | Black |
| Melting Point | 2,730 °C (decomposes) |
| Density | 3.0 - 3.2 g/cm³ |
| Electrical Resistivity | 1 - 4 x 10¹ Ω·m |
| Poisson’s Ratio | 0.15 - 0.21 |
| Specific Heat | 670 - 1180 J/kg·K |
Comparative Specifications: SiC Tray Types
|
Type |
Recrystallized SiC |
Sintered SiC |
Reaction Bonded SiC |
|
Purity |
> 99.5% |
> 98% |
> 88% |
|
Max. Working Temp. |
1650 °C |
1550 °C |
1300 °C |
|
Bulk Density (g/cm³) |
2.7 |
3.1 |
> 3.0 |
|
Apparent Porosity |
< 15% |
< 2.5% |
< 0.1% |
|
Flexural Strength (MPa) |
110 |
400 |
380 |
|
Compressive Strength (MPa) |
> 300 |
2200 |
2100 |
|
Thermal Expansion (10⁻⁶/°C) |
4.6 (at 1200°C) |
4.0 (at <500°C) |
4.4 (at <500°C) |
|
Thermal Conductivity (W/m·K) |
35 - 36 |
110 |
65 |
|
Primary Characteristics |
High-Temperature Resistance, High Purity |
High Fracture Toughness |
Excellent Chemical Resistance |
Critical Features for ICP Etching:
Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients.
Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency.
Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer.
Primary Applications:
Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy.
LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes.
Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability.
We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.
Company Details
Business Type:
Manufacturer
Year Established:
2017
Total Annual:
800-850
Employee Number:
60~70
Ecer Certification：
Verified Supplier
Founded in 2017, Kegu is a leading advanced materials developer based in China’s Xixian New District, Qinhan New City—strategically positioned near major transport links including the Xianyang East Expressway. With a registered capital of 35.5 million RMB (approx. 5 million USD), we o... Founded in 2017, Kegu is a leading advanced materials developer based in China’s Xixian New District, Qinhan New City—strategically positioned near major transport links including the Xianyang East Expressway. With a registered capital of 35.5 million RMB (approx. 5 million USD), we o...
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