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{"title":"Customizable Pressureless Sintered SiC Roller 1650\u00b0C Heat Resistant for Roller","imgUrl":"https:\/\/img.chinax.com\/nimg\/22\/34\/bf7f495406d027fc543715147cbd-200x200-1\/customizable_pressureless_sintered_sic_roller_1650_c2_b0c_heat_resistant_for_roller_hearth_kilns.jpg","attrs":{"Price":"Negotiable","Density":">3.05g\/cm3","Flexural Strength":"350-550 MPa","Material":"Silicon Carbide Ceramic"}}
{"title":"NIJ Certified Silicon Carbide Body Armor with Multi-Hit Capability and","imgUrl":"https:\/\/img.chinax.com\/nimg\/9c\/d5\/0cd9bcb5c5e29a7eaa581cd77dc2-200x200-1\/nij_certified_silicon_carbide_body_armor_with_multi_hit_capability_and_lightweight_defense_for_ballistic_protection.jpg","attrs":{"Delivery Time":"Negotiable","Model Number":"Customizable","Price":"Negotiable","Minimum Order Quantity":"Negotiable"}}
{"title":"1650\u00b0C Max Service Temp Pressureless Sintered SSiC Saggers: Custom High","imgUrl":"https:\/\/img.chinax.com\/nimg\/d1\/97\/d301bf3d6a641ec2184a9939914b-200x200-1\/1650_c2_b0c_max_service_temp_pressureless_sintered_ssic_saggers_3a_custom_high_temperature_solutions_for_demanding_applications.jpg","attrs":{"Price":"Negotiable","Model Number":"Customizable","Delivery Time":"Negotiable","Minimum Order Quantity":"Negotiable"}}
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Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing
Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures.
Key Material Advantages
Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer
Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life
High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads
Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling
Silicon Carbide (SiC) Material Properties
Property
Value
Compound Formula
SiC
Molecular Weight
40.1
Appearance
Black
Melting Point
2,730 °C (decomposes)
Density
3.0 - 3.2 g/cm³
Electrical Resistivity
1 - 4 x 10¹ Ω*m
Poisson's Ratio
0.15 - 0.21
Specific Heat
670 - 1180 J/kg*K
Comparative Specifications: SiC Tray Types
Type
Recrystallized SiC
Sintered SiC
Reaction Bonded SiC
Purity
> 99.5%
> 98%
> 88%
Max. Working Temp.
1650 °C
1550 °C
1300 °C
Bulk Density (g/cm³)
2.7
3.1
> 3.0
Apparent Porosity
< 15%
< 2.5%
< 0.1%
Flexural Strength (MPa)
110
400
380
Compressive Strength (MPa)
> 300
2200
2100
Thermal Expansion (10⁻⁶/°C)
4.6 (at 1200°C)
4.0 (at <500°C)
4.4 (at <500°C)
Thermal Conductivity (W/m*K)
35 - 36
110
65
Primary Characteristics
High-Temperature Resistance, High Purity
High Fracture Toughness
Excellent Chemical Resistance
Critical Features for ICP Etching
Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients
Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency
Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer
Primary Applications
Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy
LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes
Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability
We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.
