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Homray Material Technology

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China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer
China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

  1. China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

  1. MOQ: 5 PCS
  2. Price:
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Brand Name HMT
Model Number 6 INCH
Certification
Place of Origin CHINA

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  1. Product Details
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Product Specification

Payment Terms Supply Ability
Delivery Time Brand Name HMT
Model Number 6 INCH Certification
Place of Origin CHINA

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide waferis more suitable for high temperature and high power device.Silicon carbide wafercan be supplied in diameter 4inch,6inch , both 4H-N and 4H-SI. Please contact HMT for more detailed spec.

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Bronze Sleeve Bushings

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(HMT)is SW, SiC Ingots,W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor... (HMT)is SW, SiC Ingots,W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor...

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  • Homray Material Technology
  • 苏州吴中区苏蠡路
  • http://www.homray-material.com

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