| Payment Terms | T/T |
| Supply Ability | |
| Delivery Time | |
| Brand Name | HMT |
| Model Number | 4INCH |
| Certification | |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | |
| Delivery Time | Brand Name | HMT | |
| Model Number | 4INCH | Certification | |
| Place of Origin | CHINA |
4 inch N type SiC ingots and SiC wafers manufacturer
As the leading manufacturer of SiC substrates ,HMT company supply high quality 4 inch and 6 inch SiC ingots. The average thickness of SiC ingots are 20mm. We provide conductive N type and semi-insulating type of SiC ingots. We supply the best price on the market in worldwide, please feel free to contact us for detailed specifications. Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).
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(HMT)is SW, SiC Ingots,W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor... (HMT)is SW, SiC Ingots,W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor...
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