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4 inch GaN-on-Si epi wafer manufacturer Power HEMT
Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:
5G-related RF devices, such as power amplifier
High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
Durable and reliable devices in harsh environments
High-end sensor devices
Company Details
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(HMT)is SW, SiC Ingots，W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor... (HMT)is SW, SiC Ingots，W, Gallium Nitride(GaN) ubstrate aferIt is widely led GaN, SiCGaN /module SiC /moduleGaN WSiC WHEMT Substrate Wand Epi Wafer 6 Million US dollars in 20. Excellent products quality and professional service won the trust and support from our customers in the wor...
