IPD320N20N3G Ic Integrated Circuit TO-252

MOQ： 1pcs
Price： Negotiate
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Payment Terms	D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	97830pcs
Delivery Time	3
Packaging Details	4000
Stock	8000+
quality：	Brand new unused
Package / box:	TO-252
Brand Name	INFINEON
Model Number	IPD320N20N3G
Place of Origin	original

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Product Details
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Product Specification


Payment Terms	D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram	Supply Ability	97830pcs
Delivery Time	3	Packaging Details	4000
Stock	8000+	quality：	Brand new unused
Package / box:	TO-252	Brand Name	INFINEON
Model Number	IPD320N20N3G	Place of Origin	original
High Light	IPD320N20N3G Ic Integrated Circuit ，TO-252 Ic Integrated Circuit ，IPD320N20N3G Integrated Circuit Ic Chip

ISO9001.pdf

Application: IPD320N20N3G is an N-channel MOSFET transistor used for high-efficiency DC-DC converters and inverter applications. It can operate at high voltage, with low conduction resistance and high switching speed.
Conclusion: IPD320N20N3G has the characteristics of high efficiency, high voltage, and low conduction resistance, making it suitable for high-power DC-DC converters and inverters. It can improve the energy efficiency of the system, reduce power loss, and have a longer service life.
Parameters:
Vds (max)=200V (maximum withstand voltage)
Id=320A (maximum drain current)
Rds (on)=3.3m Ω (conduction resistance)
Qg=230nC (gate charge)
Vgs (th)=4V (gate threshold voltage)
Ciss=12300pF (input capacitance)
Coss=1170pF (output capacitance)
Crss=570pF (reverse transmission capacitance)

Product Technical Specifications

EU RoHS	Compliant with Exemption聽
ECCN (US)	EAR99
Part Status	Unconfirmed
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	OptiMOS 3
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	卤20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (掳C)	-55 to 175
Maximum Continuous Drain Current (A)	34
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (MOhm)	32@10V
Typical Gate Charge @ Vgs (nC)	22@10V
Typical Gate Charge @ 10V (nC)	22
Typical Gate to Drain Charge (nC)	3
Typical Gate to Source Charge (nC)	8
Typical Reverse Recovery Charge (nC)	500
Typical Switch Charge (nC)	5
Typical Input Capacitance @ Vds (pF)	1770@100V
Typical Reverse Transfer Capacitance @ Vds (pF)	4@100V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	135
Maximum Power Dissipation (mW)	136000
Typical Fall Time (ns)	4
Typical Rise Time (ns)	9
Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	11
Minimum Operating Temperature (掳C)	-55
Maximum Operating Temperature (掳C)	175
Packaging	Tape and Reel
Maximum Pulsed Drain Current @ TC=25掳C (A)	136
Maximum Junction Ambient Thermal Resistance on PCB (掳C/W)	50
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	4.4
Typical Reverse Recovery Time (ns)	110
Maximum Diode Forward Voltage (V)	1.2
Typical Gate Threshold Voltage (V)	3
Maximum Positive Gate Source Voltage (V)	20
Mounting	Surface Mount
Package Height	2.41(Max)
Package Width	6.22(Max)
Package Length	6.73(Max)
PCB changed	2
Tab	Tab
Standard Package Name	TO-252
Supplier Package	DPAK
Pin Count	3
Lead Shape	Gull-wing

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HK LIANYIXIN INDUSTRIAL CO., LIMITED is a professional component supplier, mainly acting as an agent for large European and American ASIC manufacturers. Since its establishment, LIANYIXIN has always been concerned about the development and impact of the global semiconductor industry on the global hi... HK LIANYIXIN INDUSTRIAL CO., LIMITED is a professional component supplier, mainly acting as an agent for large European and American ASIC manufacturers. Since its establishment, LIANYIXIN has always been concerned about the development and impact of the global semiconductor industry on the global hi...

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HK LIANYIXIN INDUSTRIAL CO., LIMITED
2515 century huiduhuixuan, No. 3078, Shennan Middle Road, Huaqiangbei street, Futian District, Shenzhen, China
https://www.ic-integratedcircuit.com/

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