| Current Rating | 326mA |
| Inductance | 68.89uH |
| DC Resistance(DCR) | 2.36Ω |
| Current - Saturation(Isat) | 366mA |
| Description | 326mA 68.89uH 366mA SMD,5.2x5.2mm Arrays, Signal Transformers RoHS |
| Mfr. Part # | SDQ12-680-R |
| Package | SMD,5.2x5.2mm |
| Model Number | SDQ12-680-R |
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Product Specification
| Current Rating | 326mA | Inductance | 68.89uH |
| DC Resistance(DCR) | 2.36Ω | Current - Saturation(Isat) | 366mA |
| Description | 326mA 68.89uH 366mA SMD,5.2x5.2mm Arrays, Signal Transformers RoHS | Mfr. Part # | SDQ12-680-R |
| Package | SMD,5.2x5.2mm | Model Number | SDQ12-680-R |
The SDQ series offers low-profile, dual-winding shielded drum inductors and transformers designed for versatile applications. These components can function as single inductors or in coupled inductor/transformer configurations with a 1:1 turns ratio. Windings can be connected in series or parallel to achieve a wide range of inductance and current ratings, from 0.47 H to 4.03 mH and 0.063 A to 6.43 A, respectively. Featuring ferrite shielding for low EMI and a ferrite core material, these inductors are suitable for various power management circuits in mobile phones, notebooks, digital cameras, and other portable electronic devices. They operate within a temperature range of -40 C to +125 C.
| Part Number | Inductance (H) 20% | Marking | OCL (H) typ. | Irms (A) typ. | Isat (A) typ. | DCR () typ. | Volts (V-s) typ. |
| SDQ12-R47-R | 0.47 | A | 0.49 | 2.78 | 4.34 | 0.0325 | 2.45 |
| SDQ12-1R0-R | 1 | B | 0.81 | 2.49 | 3.38 | 0.0403 | 3.15 |
| SDQ12-1R5-R | 1.5 | C | 1.69 | 1.69 | 2.34 | 0.0870 | 4.55 |
| SDQ12-2R2-R | 2.2 | D | 2.25 | 1.60 | 2.03 | 0.0977 | 5.25 |
| SDQ12-3R3-R | 3.3 | E | 3.61 | 1.28 | 1.60 | 0.1527 | 6.65 |
| SDQ12-4R7-R | 4.7 | F | 4.41 | 1.12 | 1.45 | 0.1990 | 7.35 |
| SDQ12-6R2-R | 6.2 | G | 6.25 | 1.02 | 1.22 | 0.2387 | 8.75 |
| SDQ12-8R2-R | 8.2 | H | 8.41 | 0.868 | 1.05 | 0.3318 | 10.15 |
| SDQ12-100-R | 10 | J | 9.61 | 0.831 | 0.981 | 0.3620 | 10.85 |
| SDQ12-150-R | 15 | K | 15.21 | 0.658 | 0.779 | 0.5766 | 13.65 |
| SDQ12-220-R | 22 | L | 22.09 | 0.548 | 0.647 | 0.8332 | 16.45 |
| SDQ12-330-R | 33 | M | 32.49 | 0.439 | 0.533 | 1.29 | 19.95 |
| SDQ12-470-R | 47 | N | 47.61 | 0.401 | 0.441 | 1.55 | 24.15 |
| SDQ12-680-R | 68 | O | 68.89 | 0.326 | 0.366 | 2.36 | 29.05 |
| SDQ12-820-R | 82 | P | 82.81 | 0.309 | 0.334 | 2.62 | 31.85 |
| SDQ25-R47-R | 0.47 | A | 0.392 | 3.71 | 6.43 | 0.0181 | 2.31 |
| SDQ25-R82-R | 0.82 | B | 0.648 | 3.37 | 5.00 | 0.0221 | 2.97 |
| SDQ25-1R0-R | 1 | C | 0.97 | 3.15 | 4.09 | 0.0252 | 3.63 |
| SDQ25-1R5-R | 1.5 | D | 1.35 | 2.97 | 3.46 | 0.0283 | 4.29 |
| SDQ25-2R2-R | 2.2 | E | 2.31 | 2.67 | 2.65 | 0.0351 | 5.61 |
| SDQ25-3R3-R | 3.3 | F | 2.89 | 2.50 | 2.37 | 0.0399 | 6.27 |
| SDQ25-4R7-R | 4.7 | G | 5 | 1.96 | 1.80 | 0.0653 | 8.25 |
| SDQ25-6R8-R | 6.8 | H | 6.73 | 1.84 | 1.55 | 0.0741 | 9.57 |
| SDQ25-8R2-R | 8.2 | J | 8.71 | 1.57 | 1.36 | 0.1015 | 10.9 |
| SDQ25-100-R | 10 | K | 9.8 | 1.53 | 1.29 | 0.1068 | 11.6 |
| SDQ25-150-R | 15 | L | 14.79 | 1.24 | 1.05 | 0.1632 | 14.2 |
| SDQ25-220-R | 22 | M | 22.47 | 1.01 | 0.849 | 0.2431 | 17.5 |
| SDQ25-330-R | 33 | N | 33.8 | 0.812 | 0.692 | 0.3795 | 21.5 |
| SDQ25-470-R | 47 | O | 47.43 | 0.749 | 0.584 | 0.4461 | 25.4 |
| SDQ25-680-R | 68 | P | 69.19 | 0.603 | 0.484 | 0.6865 | 30.7 |
| SDQ25-820-R | 82 | Q | 81.61 | 0.580 | 0.446 | 0.7435 | 33.3 |
| SDQ25-101-R | 100 | R | 98.57 | 0.499 | 0.405 | 1.00 | 36.6 |
| SDQ25-151-R | 150 | S | 150.2 | 0.408 | 0.328 | 1.50 | 45.2 |
| SDQ25-221-R | 220 | T | 223.1 | 0.326 | 0.269 | 2.36 | 55.1 |
| SDQ25-331-R | 330 | U | 329.7 | 0.292 | 0.222 | 2.93 | 67.0 |
| SDQ25-471-R | 470 | V | 472.4 | 0.243 | 0.185 | 4.25 | 80.2 |
| SDQ25-681-R | 680 | W | 677.4 | 0.197 | 0.155 | 6.45 | 96.0 |
| SDQ25-821-R | 820 | X | 824.3 | 0.186 | 0.140 | 7.25 | 106 |
| SDQ25-102-R | 1000 | Y | 1008.2 | 0.160 | 0.127 | 9.82 | 117 |
Test Parameters: (1) 100 kHz, 0.25 Vrms, 0.0 Adc. (2) Irms: DC current for approximately T of 40 C without core loss. It is recommended that the temperature of the part not to exceed +125 C. Derating is necessary for AC currents. (3) Isat: Peak current for approximately 30% rolloff @ +20 C. (4) DCR limits @ +20 C. (5) Applied Volt-Time product (V-s) across the inductor at 100 kHz necessary to generate a core loss equal to 10% of the total losses for a 40 C temperature rise. Derating of the Irms is required to prevent excessive temperature rise.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
>>300
Ecer Certification:
Verified Supplier
Company Profile Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining an... Company Profile Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining an...
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