HK NeoChip Technology Limited
| Description | ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz |
| Stock | In Stock |
| Payment Terms | T/T |
| Shipping Method | Express |
| Features | F59L4G81KSA (2N) 4 Gbit (512M x 8) 3.3V NAND Flash Memory IC |
| Product Name | F59L4G81KSA-25BCIG2N BGA67 F59L4G81KSA-25TIG2N 48TSOPI F59L4G81KSA-25BIG2N BGA63 |
| Category | Integrated Circuits (ICs)-F59L4G81KSA |
| Package / Case | TSOP /BGA |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Mfr | ESMT |
| Base Product Number | F59L4G81KSA |
View Detail Information
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Product Specification
| Description | ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz | Stock | In Stock |
| Payment Terms | T/T | Shipping Method | Express |
| Features | F59L4G81KSA (2N) 4 Gbit (512M x 8) 3.3V NAND Flash Memory IC | Product Name | F59L4G81KSA-25BCIG2N BGA67 F59L4G81KSA-25TIG2N 48TSOPI F59L4G81KSA-25BIG2N BGA63 |
| Category | Integrated Circuits (ICs)-F59L4G81KSA | Package / Case | TSOP /BGA |
| Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
| Mfr | ESMT | Base Product Number | F59L4G81KSA |
| High Light | PCB Board BGA67 memory chip ，PCB Board 48TSOPI flash memory ，PCB Board BGA63 IC component | ||
F59L4G81KSA (2N) 4 Gbit (512M x 8) 3.3V NAND Flash Memory IC
-F59L4G81KSA-25BCIG2N BGA67 F59L4G81KSA-25TIG2N 48TSOPI F59L4G81KSA-25BIG2N BGA63
Operation Temperature Condition -40°C~85°C
GENERAL DESCRIPTION
The device is a 4Gb SLC NAND Flash memory, which is stacked by two 2Gb chips for some special operations and applications. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes). The device is a memory device which utilizes the I/O pins for both address and data input/output as well as command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid state file storage, voice recording, image file memory for still cameras and other systems which require high density non-volatile memory data storage.
Elite Semiconductor Microelectronics Technology Inc. (ESMT) is a professional IC design company, founded in June 1998 in Taiwan's Hsinchu Science Industrial Park. The company's main business includes own brand IC product design, manufacturing, sales and technical services. ESMT successfully went public on Taiwan Stock Exchange, code 3006, in March 2002.
Order informaiton:
| DRAM DDR SDRAM | |||||
| 64Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M13S64164A(2C) | 4Mbx16 | DDR SDRAM 2.5V | 4K | 166/200/250MHz | 66 TSOPII |
| M13S64164A-5TG M13S64164A-5T | |||||
| 128Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M13S128168A (2S) | 8Mbx16 | DDR SDRAM 2.5V | 4K | 160/200/250MHz | 66TSOPII/ 60BGA |
| 256Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M13S2561616A(2T) | 16Mbx16 | DDR SDRAM 2.5V | 7.8us | 166/200/250MHz | 66TSOPII/ 60BGA |
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M13S5121632A(2T) | 32Mbx16 | DDR SDRAM 2.5V | 7.8us | 166/200MHz | 66 pin TSOPII |
| DDR2 SDRAM | |||||
| 128Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M14D128168A (2Y) | 8Mbx16 | DDRII SDRAM, 1.8V | 4K | 400/533/600/667MHz | 84 Ball FBGA |
| 256Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M14D2561616A(2S) | 16Mbx16 | DDRII SDRAM, 1.8V | 8K | 400/533/667MHz | 84 Ball BGA |
| M14D2561616A(2C) | 16Mbx16 | DDRII SDRAM, 1.8V | 8K | 400/533/667MHz | 84 ball BGA |
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M14D5121632A(2S) | 32Mbx16 | DDRII SDRAM, 1.8V | - | 400/533/600/667MHz | 84 Ball BGA |
| M14D5121632A (2M) | 32Mbx16 | DDRII SDRAM, 1.8V | 8K | 400/533/667MHz | 84 Ball BGA |
| 1Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M14D1G1664A (2P) | 64Mbx16 | DDRII SDRAM 1.8V | 8K | 400/533/600/667MHz | 84 Ball BGA |
| M14D1G8128A (2P) | 128Mbx8 | DDRII SDRAM 1.8V | 8K | 400/533/600/667MHz | 60 Ball BGA |
| DDR3(L) SDRAM | |||||
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M15T5121632A | 32Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933MHz | 96 Ball BGA |
| 1Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M15T1G1664A (2S) | 64Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 96 BAll BGA |
| M15T1G8128A(2S) | 128Mbx8 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 78 Ball BGA |
| M15T1G1664A (2T) | 64Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 96 BAll BGA |
| M15T1G1664A (2Z) | 64Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 96 BAll BGA |
| M15F1G1664A (2S) | 64Mbx16 | DDRIII SDRAM 1.5V | - | 933/1066/1200MHz | 96 BAll BGA |
| 2Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M15T2G8256A(2R) | 256Mbx8 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 78 Ball BGA |
| M15T2G16128A(2R) | 128Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933MHz | 96 Ball BGA |
| M15T2G16128A(2P) | 128Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 96 Ball BGA |
| M15T2G16128A (2D) | 128Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 96 Ball BGA |
| M15T2G8256A (2D) | 256Mbx8 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 78 Ball BGA |
| 4Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M15T4G16256A (2S) | 256Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 96 Ball BGA |
| M15T4G16256A(2C) | 256Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 96 Ball BGA |
| M15T4G16256A (2P) | 256Mbx16 | DDRIII SDRAM 1.35V/ 1.5V | - | 933/1066MHz | 96 Ball BGA |
| M15T4G8512A(2S) | 512Mbx8 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 78 Ball BGA |
| M15T4G8512A(2C) | 512Mbx8 | DDRIII SDRAM 1.35V/ 1.5V | - | 800/933/1066MHz | 78 Ball BGA |
| 8Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M15T8G16512A(2S) | 512Mbx16 | DDRIII SDRAM 1.35V/1.5V | - | 800/933/1066MHz | 96 Ball BGA |
| DDR4 SDRAM | |||||
| 4Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M16U4G16256A(2Z) | 256Mbx16 | DDR4 1.2V | - | 1333/ 1600MHz | 96 Ball BGA |
| M16U4G8512A(2Z) | 512Mbx8 | DDR4 1.2V | - | 1333/ 1600MHz | 78 Ball BGA |
| LPSDR SDRAM | |||||
| 64Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M52D64322A (2S) | 2Mbx32 | LPSDR SDRAM 1.8V | 4K | 166MHz | 54 Ball FBGA |
| 256Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M52D2561616A(2F) | 16Mbx16 | LPSDR SDRAM 1.8V | 8K | 143/166/200MHz | 54 Ball FBGA |
| M52D256328A(2F) | 8Mbx32 | LPSDR SDRAM 1.8V | 4K | 143/166MHz | 90 Ball FBGA |
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M52D5123216A | 16Mbx32 | LPSDR SDRAM 1.8V | 8K | 143/166MHz | 90 Ball BGA |
| M52D5121632A | 32Mbx16 | LPSDR SDRAM 1.8V | 8K | 143/166/200MHz | 54 Ball FBGA |
| LPDDR SDRAM | |||||
| 64Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M53D64164A (2C) | 4Mbx16 | LPDDR SDRAM 1.8V | 4K | 200/220MHz | 60 Ball BGA |
| M13D64322A (2S) | 2Mbx32 | LPDDR SDRAM 1.8V | 4K | 200/222/250MHz | 144 Ball FBGA |
| 256Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M53D2561616A (2F) | 16Mbx16 | LPDDR SDRAM 1.8V | 8K | 133/166/200MHz | 60 Ball BGA |
| M53D256328A (2F) | 8Mbx32 | LPDDR SDRAM 1.8V | 8K | 133/166/200MHz | 144 Ball FBGA |
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M53D5121632A | 32Mbx16 | LPDDR SDRAM 1.8V | 8K | 200MHz | 60 Ball BGA |
| M53D5123216A | 16Mbx32 | LPDDR SDRAM 1.8V | 8K | 200MHz | 144 Ball FBGA |
| 1Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M53D1G1664A | 64Mbx16 | LPDDR SDRAM 1.8V | 8K | 133/166/200MHz | 60 Ball BGA |
| M53D1G3232A | 32Mbx32 | LPDDR SDRAM 1.8V | 8K | 133/166/200MHz | 144 Ball FBGA |
| LPDDR2 SDRAM | |||||
| 512Mb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M54D5121632A | 32Mbx16 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 400/ 533MHz | 134 Ball BGA |
| M54D5123216A | 16Mbx32 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 400/ 533MHz | 134 Ball BGA |
| 1Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M54D1G1664A | 64Mbx16 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 333/400/533MHz | 134 BGA |
| M54D1G1664A (2G) | 64Mbx16 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 400/533MHz | 134 BGA |
| M54D1G3232A (2G) | 32Mbx32 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 400/533MHz | 134 BGA |
| M54D1G3232A | 32Mbx32 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 333/400/533MHz | 134 BGA |
| 2Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M54D2G3264A | 64Mbx32 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 333/400/533MHz | 134 Ball BGA |
| M54D2G16128A | 128Mbx16 | LPDDR2 SDRAM 1.8V/ 1.2V | - | 333/400/533MHz | 134 Ball BGA |
| LPDDR3 SDRAM | |||||
| 1Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M55D1G3232A(2Y) | 32Mbx32 | LPDDR3 SDRAM 1.8V/ 1.2V | - | 800/ 933/ 1066MHz | 178 Ball BGA |
| M55D1G1664A (2Y) | 64Mbx16 | LPDDR3 SDRAM 1.8V/ 1.2V | - | 800/ 933/ 1066MHz | 178 Ball BGA |
| 4Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M55D4G16256A(2R) | 256Mbx16 | LPDDR3 SDRAM 1.8V/ 1.2V | - | 800/933/1066MHz | 178 Ball BGA |
| M55D4G32128A(2R) | 128Mbx32 | LPDDR3 SDRAM 1.8V/ 1.2V | - | 800/933/1066MHz | 178 Ball BGA |
| LPDDR4x SDRAM | |||||
| 2Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M56Z2G16128A (2R) | 128Mbx16 | LPDDR4x SDRAM, | - | 1866/2133MHz | 200 Ball BGA |
| 4Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M56Z4G16256A(2H) | 256Mbx16 | LPDDR4x SDRAM, | - | 1866/2133MHz | 200 Ball BGA |
| M56Z4G32128A (2R) | 128Mbx32 | LPDDR4x SDRAM, | - | 1866/2133MHz | 200 Ball BGA |
| 8Gb | |||||
| Part Number | Organization | Description | Refresh | Speed(mhz) | Package |
| M56Z8G32256A | 256Mbx32 | LPDDR4x SDRAM, | - | 1866MHz | 200 Ball BGA |
| M56Z8G32256A (2H) | 256Mbx32 | LPDDR4x SDRAM, | - | 2133MHz | 200 Ball BGA |
Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2025
Total Annual:
100000-500000
Employee Number:
50~70
Ecer Certification：
Verified Supplier
Neochip Technology Co., Ltd., founded in 2025 as a subsidiary of Shenzhen Pimonte Electronics Co., Ltd. (established 2017), is a leading China-based electronic components distributor specializing in serving international clients. Headquartered in Shenzhen with a strategic branch in Hong Kong, Neoch... Neochip Technology Co., Ltd., founded in 2025 as a subsidiary of Shenzhen Pimonte Electronics Co., Ltd. (established 2017), is a leading China-based electronic components distributor specializing in serving international clients. Headquartered in Shenzhen with a strategic branch in Hong Kong, Neoch...
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