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Shenzhen Anxinruo Technology Co., Ltd.

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China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing

  1. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
  2. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
  3. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
  4. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
  5. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing
  6. China NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing

NTTFS4C10NTAG WDFN-8 Field Effect Transistor 30V 8.2A N-Channel Screen Printing

  1. MOQ:
  2. Price: CN¥1.44/pieces
  3. Get Latest Price
Description Surface mount type, -
Operating Temperature -55 C ~ + 150 C, standard
Series NTTFS4C10N
Type Metal oxide semiconductor field effect transistor, MOSFET
D/C 23+, 23+
Package Type Surface Mount
Application MOSFET driver, All kinds of Electronic Products
Supplier Type Other
Cross Reference -
Media Available Photo
Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (max) 30 V
Vce Saturation (Max) @ Ib, Ic 2.2V @ 250A
Current - Collector Cutoff (Max) standard
DC Current Gain (hFE) (Min) @ Ic, Vce standard
Power - Max 790mW(Ta),23.6W(Tc)
Frequency - Transition standard
Mounting Type Surface Mount, Surface mount type
Package / Case WDFN-8
Resistor - Base (R1) standard
Resistor - Emitter Base (R2) standard
FET Type standard
FET Feature Standard
Drain to Source Voltage (Vdss) standard
Current - Continuous Drain (Id) @ 25°C standard
Rds On (Max) @ Id, Vgs standard
Vgs(th) (Max) @ Id standard
Gate Charge (Qg) (Max) @ Vgs standard
Input Capacitance (Ciss) (Max) @ Vds standard
Frequency standard
Current Rating (Amps) standard
Noise Figure standard
Power - Output standard
Voltage - Rated standard
Drive Voltage (Max Rds On, Min Rds On) standard
Vgs (Max) standard
IGBT Type standard
Configuration standard
Vce(on) (Max) @ Vge, Ic standard
Input Capacitance (Cies) @ Vce standard
Input standard
NTC Thermistor standard
Voltage - Breakdown (V(BR)GSS) standard
Current - Drain (Idss) @ Vds (Vgs=0) standard
Current Drain (Id) - Max standard
Voltage - Cutoff (VGS off) @ Id standard
Resistance - RDS(On) standard
Voltage - Output standard
Voltage - Offset (Vt) standard
Current - Gate to Anode Leakage (Igao) standard
Current - Valley (Iv) standard
Current - Peak standard
Transistor Type singleFET,MOSFET
Product Name NTTFS4C10NTAG
Original fromm Original Brand
Detalis Please contact us
Shipping by DHL\UPS\Fedex\EMS\HK Post
Payment Paypal Western Union t/t
Condition Brand Newand Original
Warranty 365 Days Warranty
Quality Original High-quality
Voltage standard
Applications MOSFET
Model Number NTTFS4C10NTAG
Place of Origin original
Brand Name original

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  1. Product Details
  2. Company Details

Product Specification

Description Surface mount type, - Operating Temperature -55 C ~ + 150 C, standard
Series NTTFS4C10N Type Metal oxide semiconductor field effect transistor, MOSFET
D/C 23+, 23+ Package Type Surface Mount
Application MOSFET driver, All kinds of Electronic Products Supplier Type Other
Cross Reference - Media Available Photo
Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (max) 30 V
Vce Saturation (Max) @ Ib, Ic 2.2V @ 250A Current - Collector Cutoff (Max) standard
DC Current Gain (hFE) (Min) @ Ic, Vce standard Power - Max 790mW(Ta),23.6W(Tc)
Frequency - Transition standard Mounting Type Surface Mount, Surface mount type
Package / Case WDFN-8 Resistor - Base (R1) standard
Resistor - Emitter Base (R2) standard FET Type standard
FET Feature Standard Drain to Source Voltage (Vdss) standard
Current - Continuous Drain (Id) @ 25°C standard Rds On (Max) @ Id, Vgs standard
Vgs(th) (Max) @ Id standard Gate Charge (Qg) (Max) @ Vgs standard
Input Capacitance (Ciss) (Max) @ Vds standard Frequency standard
Current Rating (Amps) standard Noise Figure standard
Power - Output standard Voltage - Rated standard
Drive Voltage (Max Rds On, Min Rds On) standard Vgs (Max) standard
IGBT Type standard Configuration standard
Vce(on) (Max) @ Vge, Ic standard Input Capacitance (Cies) @ Vce standard
Input standard NTC Thermistor standard
Voltage - Breakdown (V(BR)GSS) standard Current - Drain (Idss) @ Vds (Vgs=0) standard
Current Drain (Id) - Max standard Voltage - Cutoff (VGS off) @ Id standard
Resistance - RDS(On) standard Voltage - Output standard
Voltage - Offset (Vt) standard Current - Gate to Anode Leakage (Igao) standard
Current - Valley (Iv) standard Current - Peak standard
Transistor Type singleFET,MOSFET Product Name NTTFS4C10NTAG
Original fromm Original Brand Detalis Please contact us
Shipping by DHL\UPS\Fedex\EMS\HK Post Payment Paypal Western Union t/t
Condition Brand Newand Original Warranty 365 Days Warranty
Quality Original High-quality Voltage standard
Applications MOSFET Model Number NTTFS4C10NTAG
Place of Origin original Brand Name original
High Light Field Effect Transistor 30V 8.2ANTTFS4C10NTAG Field Effect TransistorNTTFS4C10NTAG fe transistor
 
Product Description
Product type:
Metal oxide semiconductor field effect transistor MOSFET
Model Number:
NTTFS4C10NTAG
Series:
NTTFS4C10N
Vendor:
ON
Packaging:
WDFN-8
Install the style:
Surface mount type
 
New and original
NTTFS4C10NTAG WDFN-8 Metal oxide semiconductor field effect transistor MOSFET is one of our best-selling IC chips
Contact Person:
Mr.Guo
 
Tel:
+86 13434437778
 
Email:
XCDZIC@163.COM
 
Wechat:
0086 13434437778
 
Packing & Delivery
Quantity(pieces)
1-100
100-1000
1000-10000
Lead time (days)
3-5
5-8
To be negotiated
Company Profile
FAQ

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Trading Company

  • Year Established:

    2015

  • Total Annual:

    3000000-5000000

  • Employee Number:

    30~50

  • Ecer Certification:

    Verified Supplier

Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev... Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev...

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Get in touch with us

  • Reach Us
  • Shenzhen Anxinruo Technology Co., Ltd.
  • Room 3-1211A, No. 8760 Bao'an Avenue, Hongxing Community, Songgang Street, Bao'an District, Shenzhen City
  • https://www.icsmodules.com/

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