Shenzhen Anxinruo Technology Co., Ltd.
| Description | MOSFETs, - |
| Operating Temperature | -55°C ~ 150°C, -55°C ~ 150°C |
| Series | SI2 |
| Type | MOSFET , Transistors |
| D/C | 23+, 23+ |
| Package Type | Surface Mount |
| Application | General Purpose, All kinds of Electronic Products |
| Supplier Type | Other |
| Cross Reference | - |
| Media Available | Other |
| Voltage - Collector Emitter Breakdown (max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | 860mW(Ta),1.6W(Tc) |
| Frequency - Transition | - |
| Mounting Type | Surface Mount, Surface mount |
| Package / Case | SOT-23 |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | - |
| FET Type | - |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 112mohm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V |
| Frequency | - |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Power - Output | - |
| Voltage - Rated | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±8V |
| IGBT Type | - |
| Configuration | Single Phase |
| Vce(on) (Max) @ Vge, Ic | - |
| Input Capacitance (Cies) @ Vce | - |
| Input | - |
| NTC Thermistor | - |
| Voltage - Breakdown (V(BR)GSS) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | - |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - |
| Resistance - RDS(On) | - |
| Voltage - Output | - |
| Voltage - Offset (Vt) | - |
| Current - Gate to Anode Leakage (Igao) | -- |
| Current - Valley (Iv) | - |
| Current - Peak | - |
| Transistor Type | MOS |
| Product Name | SI2301CDS-T1-GE3 |
| Original fromm | Original Brand |
| Detalis | Please contact us |
| Shipping by | DHL\UPS\Fedex\EMS\HK Post |
| Payment | Paypal Western Union t/t |
| Condition | Brand Newand Original |
| Warranty | 365 DaysWarranty |
| Quality | Original High-quality |
| Voltage | - |
| Applications | MOS |
| Model Number | SI2301CDS-T1-GE3 |
| Place of Origin | original |
| Brand Name | original |
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Product Specification
| Description | MOSFETs, - | Operating Temperature | -55°C ~ 150°C, -55°C ~ 150°C |
| Series | SI2 | Type | MOSFET , Transistors |
| D/C | 23+, 23+ | Package Type | Surface Mount |
| Application | General Purpose, All kinds of Electronic Products | Supplier Type | Other |
| Cross Reference | - | Media Available | Other |
| Voltage - Collector Emitter Breakdown (max) | - | Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - | DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | 860mW(Ta),1.6W(Tc) | Frequency - Transition | - |
| Mounting Type | Surface Mount, Surface mount | Package / Case | SOT-23 |
| Resistor - Base (R1) | - | Resistor - Emitter Base (R2) | - |
| FET Type | - | FET Feature | - |
| Drain to Source Voltage (Vdss) | - | Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 112mohm @ 2.8A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V |
| Frequency | - | Current Rating (Amps) | - |
| Noise Figure | - | Power - Output | - |
| Voltage - Rated | - | Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±8V | IGBT Type | - |
| Configuration | Single Phase | Vce(on) (Max) @ Vge, Ic | - |
| Input Capacitance (Cies) @ Vce | - | Input | - |
| NTC Thermistor | - | Voltage - Breakdown (V(BR)GSS) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | - | Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - | Resistance - RDS(On) | - |
| Voltage - Output | - | Voltage - Offset (Vt) | - |
| Current - Gate to Anode Leakage (Igao) | -- | Current - Valley (Iv) | - |
| Current - Peak | - | Transistor Type | MOS |
| Product Name | SI2301CDS-T1-GE3 | Original fromm | Original Brand |
| Detalis | Please contact us | Shipping by | DHL\UPS\Fedex\EMS\HK Post |
| Payment | Paypal Western Union t/t | Condition | Brand Newand Original |
| Warranty | 365 DaysWarranty | Quality | Original High-quality |
| Voltage | - | Applications | MOS |
| Model Number | SI2301CDS-T1-GE3 | Place of Origin | original |
| Brand Name | original | ||
| High Light | SI2301CDS-T1-GE3 MOSFET FET ，MOSFET FET SOT-23 Packaging ，P Channel MOSFET FET | ||
| Product type: | MOSFET field effect transistor chip |
| Model Number: | SI2301CDS-T1-GE3 |
| Series: | SI2 |
| Vendor: | VISHAY |
| Packaging: | SOT-23 |
| Install the style: | Surface mount |
| | New and original |
| Contact Person: | Mr.Guo | | |
| Tel: | +86 13434437778 | | |
| Email: | XCDZIC@163.COM | | |
| Wechat: | 0086 13434437778 | | |
| Quantity(pieces) | 1-100 | 100-1000 | 1000-10000 |
| Lead time (days) | 3-5 | 5-8 | To be negotiated |
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
2015
Total Annual:
3000000-5000000
Employee Number:
30~50
Ecer Certification：
Verified Supplier
Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev... Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev...
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