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Shenzhen Anxinruo Technology Co., Ltd.

  • China,Shenzhen
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China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver

  1. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
  2. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
  3. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
  4. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
  5. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver
  6. China NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver

NCE80TD65BT TO-247 Bulk IGBT Power Transistor 80A 650V For MOSFET Driver

  1. MOQ:
  2. Price: CN¥1.44/pieces
  3. Get Latest Price
Description IGBT tube high power, -
Operating Temperature -, -
Series NCE80
Type IGBT Transistor, IGBT
D/C 23+, 23+
Package Type SMD/SMT
Application MOSFET driver, All kinds of Electronic Products
Supplier Type Other
Media Available Photo
Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (max) -
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max -
Frequency - Transition -
Mounting Type SMD/SMT, SMD/SMT
Package / Case TO-247
Resistor - Base (R1) SMD/SMT
Resistor - Emitter Base (R2) SMD/SMT
FET Type -
FET Feature -
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Frequency -
Current Rating (Amps) -
Noise Figure -
Power - Output -
Voltage - Rated -
Drive Voltage (Max Rds On, Min Rds On) -
Vgs (Max) -
IGBT Type -
Configuration -
Vce(on) (Max) @ Vge, Ic -
Input Capacitance (Cies) @ Vce -
Input -
NTC Thermistor --
Voltage - Breakdown (V(BR)GSS) -
Current - Drain (Idss) @ Vds (Vgs=0) -
Current Drain (Id) - Max -
Voltage - Cutoff (VGS off) @ Id -
Resistance - RDS(On) -
Voltage - Output -
Voltage - Offset (Vt) -
Current - Gate to Anode Leakage (Igao) -
Current - Valley (Iv) -
Current - Peak -
Transistor Type -
Product Name NCE80TD65BT
Original fromm Original Brand
Detalis Please contact us
Shipping by DHL\UPS\Fedex\EMS\HK Post
Payment Paypal Western Union t/t
Condition Brand Newand Original
Warranty 365 DaysWarranty
Quality Original High-quality
Voltage -
Applications -
Model Number NCE80TD65BT
Place of Origin original
Brand Name original

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  1. Product Details
  2. Company Details

Product Specification

Description IGBT tube high power, - Operating Temperature -, -
Series NCE80 Type IGBT Transistor, IGBT
D/C 23+, 23+ Package Type SMD/SMT
Application MOSFET driver, All kinds of Electronic Products Supplier Type Other
Media Available Photo Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (max) - Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max - Frequency - Transition -
Mounting Type SMD/SMT, SMD/SMT Package / Case TO-247
Resistor - Base (R1) SMD/SMT Resistor - Emitter Base (R2) SMD/SMT
FET Type - FET Feature -
Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds -
Frequency - Current Rating (Amps) -
Noise Figure - Power - Output -
Voltage - Rated - Drive Voltage (Max Rds On, Min Rds On) -
Vgs (Max) - IGBT Type -
Configuration - Vce(on) (Max) @ Vge, Ic -
Input Capacitance (Cies) @ Vce - Input -
NTC Thermistor -- Voltage - Breakdown (V(BR)GSS) -
Current - Drain (Idss) @ Vds (Vgs=0) - Current Drain (Id) - Max -
Voltage - Cutoff (VGS off) @ Id - Resistance - RDS(On) -
Voltage - Output - Voltage - Offset (Vt) -
Current - Gate to Anode Leakage (Igao) - Current - Valley (Iv) -
Current - Peak - Transistor Type -
Product Name NCE80TD65BT Original fromm Original Brand
Detalis Please contact us Shipping by DHL\UPS\Fedex\EMS\HK Post
Payment Paypal Western Union t/t Condition Brand Newand Original
Warranty 365 DaysWarranty Quality Original High-quality
Voltage - Applications -
Model Number NCE80TD65BT Place of Origin original
Brand Name original
High Light IGBT Power Transistor 80ANCE80TD65BT IGBT Power Transistor80A 650V IGBT transistor
 
Product Description
Product type:
IGBT high power tube
Model Number:
NCE80TD65BT
Series:
NCE80
Vendor:
NCE
Packaging:
TO-247
Install the style:
SMD/SMT
 
New and original
NCE80TD65BT TO-247 IGBT high power tube is one of our best-selling IC chips
Contact Person:
Mr.Guo
 
Tel:
+86 13434437778
 
Email:
XCDZIC@163.COM
 
Wechat:
0086 13434437778
 
Packing & Delivery
Quantity(pieces)
1-100
100-1000
1000-10000
Lead time (days)
3-5
5-8
To be negotiated
Company Profile
FAQ

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Trading Company

  • Year Established:

    2015

  • Total Annual:

    3000000-5000000

  • Employee Number:

    30~50

  • Ecer Certification:

    Verified Supplier

Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev... Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev...

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  • Reach Us
  • Shenzhen Anxinruo Technology Co., Ltd.
  • Room 3-1211A, No. 8760 Bao'an Avenue, Hongxing Community, Songgang Street, Bao'an District, Shenzhen City
  • https://www.icsmodules.com/

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