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Shenzhen Anxinruo Technology Co., Ltd.

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China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated

  1. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
  2. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
  3. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
  4. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
  5. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated
  6. China FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated

FGH60N60 Electronic Component IGBT Transistor Single Tube 60A600V Integrated

  1. MOQ:
  2. Price: CN¥1.44/pieces
  3. Get Latest Price
Description transistor, original
Operating Temperature -55°C ~ 150°C, -
Series FGH60
Type IGBT Transistor, Triode Transistor MOSFET
D/C 23+
Package Type Throught Hole
Application General Purpose
Supplier Type Other
Media Available Other
Current - Collector (Ic) (Max) 120A
Voltage - Collector Emitter Breakdown (max) -
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 378W
Frequency - Transition -
Mounting Type Through Hole, Through Hole
Package / Case TO-247
Resistor - Base (R1) -
Resistor - Emitter Base (R2) -
FET Feature -
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Frequency -
Current Rating (Amps) -
Noise Figure -
Power - Output -
Voltage - Rated -
Drive Voltage (Max Rds On, Min Rds On) -
Vgs (Max) -
IGBT Type Field Stop
Configuration -
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Input Capacitance (Cies) @ Vce -
Input -
NTC Thermistor -
Voltage - Breakdown (V(BR)GSS) -
Current - Drain (Idss) @ Vds (Vgs=0) -
Current Drain (Id) - Max -
Voltage - Cutoff (VGS off) @ Id -
Resistance - RDS(On) -
Voltage - Output -
Voltage - Offset (Vt) -
Current - Gate to Anode Leakage (Igao) -
Current - Valley (Iv) -
Current - Peak -
Transistor Type -
Part Number FGH60N60
Voltage-Collector Emitter Breakdown(Max) 600V
Current-Collector Pulsed(Icm) 180A
Switching Energy 1.79mJ (on), 670uJ (off)
Supplier Device Package TO-247
Service One Stop Bom Service
Datasheet Please contact us!
Inverter Please contact us!
Warranty 1-3 Years
Shipping by DHL\UPS\Fedex\EMS\HK Post
Voltage -
Applications -
Model Number FGH60N60
Place of Origin original
Brand Name original

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  1. Product Details
  2. Company Details

Product Specification

Description transistor, original Operating Temperature -55°C ~ 150°C, -
Series FGH60 Type IGBT Transistor, Triode Transistor MOSFET
D/C 23+ Package Type Throught Hole
Application General Purpose Supplier Type Other
Media Available Other Current - Collector (Ic) (Max) 120A
Voltage - Collector Emitter Breakdown (max) - Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 378W Frequency - Transition -
Mounting Type Through Hole, Through Hole Package / Case TO-247
Resistor - Base (R1) - Resistor - Emitter Base (R2) -
FET Feature - Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds - Frequency -
Current Rating (Amps) - Noise Figure -
Power - Output - Voltage - Rated -
Drive Voltage (Max Rds On, Min Rds On) - Vgs (Max) -
IGBT Type Field Stop Configuration -
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Input Capacitance (Cies) @ Vce -
Input - NTC Thermistor -
Voltage - Breakdown (V(BR)GSS) - Current - Drain (Idss) @ Vds (Vgs=0) -
Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id -
Resistance - RDS(On) - Voltage - Output -
Voltage - Offset (Vt) - Current - Gate to Anode Leakage (Igao) -
Current - Valley (Iv) - Current - Peak -
Transistor Type - Part Number FGH60N60
Voltage-Collector Emitter Breakdown(Max) 600V Current-Collector Pulsed(Icm) 180A
Switching Energy 1.79mJ (on), 670uJ (off) Supplier Device Package TO-247
Service One Stop Bom Service Datasheet Please contact us!
Inverter Please contact us! Warranty 1-3 Years
Shipping by DHL\UPS\Fedex\EMS\HK Post Voltage -
Applications - Model Number FGH60N60
Place of Origin original Brand Name original
High Light IGBT Transistor Single Tube60A600V Integrated CircuitFGH60N60 IGBT Transistor
 
Product Description
Product type:
Insulated gate bipolar transistor IGBT
Model Number:
FGH60N60
Series:
FGH60
Vendor:
ON
Packaging:
TO-247
Install the style:
through-hole
 
New and original
FGH60N60 TO-247 Insulated gate bipolar transistor IGBT is one of our best-selling IC chips
Contact Person:
Mr.Guo
 
Tel:
+86 13434437778
 
Email:
XCDZIC@163.COM
 
Wechat:
0086 13434437778
 
Packing & Delivery
Quantity(pieces)
1-100
100-1000
1000-10000
Lead time (days)
3-5
5-8
To be negotiated
Company Profile
FAQ

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Trading Company

  • Year Established:

    2015

  • Total Annual:

    3000000-5000000

  • Employee Number:

    30~50

  • Ecer Certification:

    Verified Supplier

Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev... Shenzhen Anxinruo Technology Co., Ltd. was established on June 14, 2023, as an emerging technology enterprise. Since its inception, the company has set clear development goals and business philosophies, adhering to the core principle of "Quality First, Customer Foremost," which is integrated into ev...

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  • Shenzhen Anxinruo Technology Co., Ltd.
  • Room 3-1211A, No. 8760 Bao'an Avenue, Hongxing Community, Songgang Street, Bao'an District, Shenzhen City
  • https://www.icsmodules.com/

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